High-voltage-resistant SiC PIN diode and manufacturing method thereof
A technology with high voltage resistance and diodes, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., to achieve the effects of single material, simple material deposition, and improved voltage resistance
Pending Publication Date: 2022-01-11
GLOBAL POWER TECH CO LTD
View PDF1 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] The name of the invention applied by Hebei University of Technology is: A Si-based PIN diode structure, the application number is: CN201910212187.4, its main feature is that on the basis of relying on the PN junction to improve the withstand voltage, the polarization layer of AlGaN is added to improve the device. withstand voltage characteristics, but this technical solution is not suitable for SIC PIN diodes at all, because it uses the PN junction in Si-based PIN diodes to improve the withstand voltage, so it is impossible to improve the withstand voltage of SIC PIN diodes in this way
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0035] like Figures 1 to 8 Shown, a kind of manufacturing method of high voltage SiC PIN diode of the present invention comprises:
[0036] Step 1. Rinse the surface of the SiC epitaxial wafer with deionized water, and then soak it in a heated mixed washing solution for 1 minute to further remove foreign matter on the surface of the SiC epitaxial wafer to form a substrate; the mixed washing solution includes ammonia water, hydrogen peroxide, and deionized Ionized water;
[0037] Step 2, epitaxially growing an N-type heavily doped semiconductor transport layer on the surface of the substrate;
[0038] Step 3, epitaxially growing an N-type intrinsic layer on the N-type heavily doped semiconductor transport layer;
[0039] Step 4, epitaxially growing a withstand voltage improving layer on the N-type SiC intrinsic layer, the withstand voltage improving layer is a high voltage resistant material, and the high voltage resistant material is compatible with SiC;
[0040] Step 5, e...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides a high-voltage-resistant SiCPIN diode and a manufacturing method thereof. The high-voltage-resistant SiCPIN diode comprises an N-type ohmic electrode; an N-type heavily-doped semiconductor transmission layer, wherein the lower side surface of the N-type heavily-doped semiconductor transmission layer is connected to the upper side surface of the N-type ohmic electrode; an N-type intrinsic layer, wherein the lower side surface of the N-type intrinsic layer is connected to the upper side surface of the N-type heavily doped semiconductor transmission layer; a voltage-withstanding improving layer, wherein the lower side surface of the voltage-withstanding improving layer is connected to the upper side surface of the N-type intrinsic layer, and the voltage-withstanding improving layer is made of diamond or silicon dioxide; a P-type heavily-doped semiconductor transmission layer, wherein the lower side surface of the P-type heavily-doped semiconductor transmission layer is connected to the upper side surface of the voltage withstanding improving layer; and a P-type ohmic electrode, wherein the lower side surface of the P-type ohmic electrode is connected to the upper side surface of the P-type heavily doped semiconductor transmission layer, so the voltage endurance capability of the SiCPIN diode is improved.
Description
Technical field [0001] The invention relates to a high-voltage SiC PIN diode and a manufacturing method thereof. Background technique [0002] SiC device silicon carbide (SiC) material has attracted widespread attention and research due to its superior physical properties. Its high-temperature and high-power electronic devices have the advantages of high input impedance, fast switching speed, high operating frequency, high temperature and high pressure resistance, etc., and have been widely used in switching regulated power supplies, high-frequency heating, automotive electronics, and power amplifiers. [0003] However, due to material characteristics, its intrinsic breakdown field strength is fixed. The main way to improve the withstand voltage of PIN diodes is to improve the terminal structure and obtain higher voltage PIN diodes by optimizing the doping method. [0004] The invention name applied by Hebei University of Technology is: A Si-based PIN diode structure, and t...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): H01L29/06H01L29/16H01L29/868H01L21/329
CPCH01L29/0615H01L29/1608H01L29/868H01L29/6606
Inventor 张瑜洁施广彦李佳帅李志君黄波
Owner GLOBAL POWER TECH CO LTD