Long-life organic light-emitting diode and preparation method and device thereof

A light-emitting diode, long-life technology, used in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problems of short life, rapid brightness decay, etc., to improve work stability, wide exciton distribution range , the effect of suppressing annihilation

Inactive Publication Date: 2022-01-11
苏州驳凡熹科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For blue OLEDs, even with good packaging and low driving current (that is, excluding external incentives and carrier thermal effects), its brightness still decays rapidly, indicating that exciton-induced degradation is responsible for its extremely short lifetime. The most important reason

Method used

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  • Long-life organic light-emitting diode and preparation method and device thereof
  • Long-life organic light-emitting diode and preparation method and device thereof
  • Long-life organic light-emitting diode and preparation method and device thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] Embodiment 1: A long-life organic light-emitting diode, using a buffer layer structure with gradient concentration mixed on both sides of the light-emitting layer, using the blue light host material BH1 as the light-emitting material to prepare an organic light-emitting diode (device A1), the device structure is: ITO / HAT-CN(10nm) / HTL1(50nm) / HTL1:BH1(gradient ratio, 1:1in volume,15nm) / BH1(20nm) / ETL1:BH1(gradient ratio,1:1in volume, 15nm) / ETL1(40nm ) / Liq(2nm) / Al(100nm).

[0055] A method for preparing a long-life organic light-emitting diode. The preparation steps of the method are as follows:

[0056] Step 1: Put the ITO substrate into containers containing solvents such as detergent, acetone, isopropanol, and deionized water in sequence for ultrasonic cleaning. Each solvent is ultrasonically cleaned for 15 minutes, then blown dry with nitrogen, and use Ozone treatment for 15 minutes. Thereafter put it into a vacuum below 7.0×10 -4 In the cavity of Pa.

[0057] The ...

Embodiment 2

[0064] Embodiment 2: A long-life organic light-emitting diode, using a buffer layer structure with gradient concentration mixed on both sides of the light-emitting layer, using the blue light host material BH1 as the light-emitting material to prepare an organic light-emitting diode (device A1), the device structure is: ITO / HAT-CN(5nm) / HTL1(30nm) / HTL1:BH1(gradient ratio, 1:1in volume,10nm) / BH1(30nm) / ETL1:BH1(gradient ratio,1:1in volume, 10nm) / ETL1(55nm ) / Liq(3nm) / Al(150nm).

[0065] A method for preparing a long-life organic light-emitting diode. The preparation steps of the method are as follows:

[0066] Step 1: Put the ITO substrate into containers containing solvents such as detergent, acetone, isopropanol, and deionized water in sequence for ultrasonic cleaning. Each solvent is ultrasonically cleaned for 15 minutes, then blown dry with nitrogen, and use Ozone treatment for 15 minutes. Thereafter put it into a vacuum below 7.0×10 -4 In the cavity of Pa.

[0067] The s...

Embodiment 3

[0074] Embodiment 3: A long-life organic light-emitting diode, using a buffer layer structure with gradient concentration mixed on both sides of the light-emitting layer, using the blue light host material BH1 as the light-emitting material to prepare an organic light-emitting diode (device A1), the device structure is: ITO / HAT-CN(8nm) / HTL1(70nm) / HTL1:BH1(gradient ratio, 1:1in volume,20nm) / BH1(15nm) / ETL1:BH1(gradient ratio,1:1in volume, 20nm) / ETL1(35nm ) / Liq(4nm) / Al(80nm).

[0075] A method for preparing a long-life organic light-emitting diode. The preparation steps of the method are as follows:

[0076] Step 1: Put the ITO substrate into containers containing solvents such as detergent, acetone, isopropanol, and deionized water in sequence for ultrasonic cleaning. Each solvent is ultrasonically cleaned for 15 minutes, then blown dry with nitrogen, and use Ozone treatment for 15 minutes. Thereafter put it into a vacuum below 7.0×10 -4 In the cavity of Pa.

[0077] The se...

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Abstract

The invention discloses a long-life organic light-emitting diode, which is characterized in that transition layers are arranged on two sides of a light-emitting layer, the light-emitting diode comprises an ITO glass substrate, a hole injection layer deposited on the ITO glass substrate, a hole transport layer deposited on the hole injection layer, a light-emitting layer deposited on the hole transport layer, a first transition layer formed in the process that the light-emitting layer is deposited on the hole transport layer, an electron transport layer deposited on the light-emitting layer, a second transition layer formed in the process that the electron transport layer is deposited on the light-emitting layer, and a composite double-cathode layer deposited on the electron transport layer. The organic mixed layers are continuously deposited on the two sides of the light-emitting layer, the situation that the film adsorbs cavity impurities during deposition is effectively inhibited, meanwhile, the mixed layers can adjust carrier balance and regulate and control exciton distribution of the light-emitting layer, the exciton distribution range is wider, and exciton-exciton annihilation is inhibited, therefore the working stability of a device is greatly improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor electroluminescence, and in particular relates to a long-life organic light emitting diode and a preparation method and device thereof. Background technique [0002] Organic light-emitting diodes (OLEDs) have the advantages of thinness, flexibility, and energy saving. They have received more and more attention and are widely used as electronic devices such as mobile phones, computers, virtual reality / augmented reality (VR / AR), and car navigation. display. [0003] However, in practical applications, due to the rapid decay of the brightness of the blue light component, the color rendering index or color gamut of lighting or display products will change during use. Therefore, the long-life blue OLED has always been one of the bottlenecks that limit the performance improvement of display products. [0004] The causes of OLED aging can be divided into external and internal factors. Internal f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K71/16H10K30/865H10K50/11H10K71/00
Inventor 周东营蔡倩丁兴立
Owner 苏州驳凡熹科技有限公司
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