GaN-based blue-violet light vertical cavity surface emitting laser chip and manufacturing method thereof
A vertical cavity surface emission, laser technology, applied in lasers, laser parts, semiconductor lasers and other directions, can solve the problems of affecting the light output rate and stable use, the quality of the laser chip is not ideal, the large lattice mismatch, etc., to improve the quality and light extraction efficiency, suppressing carrier overflow, and reducing deformation defects
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[0030] In order to make the purpose, technical solution and advantages of the present disclosure clearer, the implementation manners of the present disclosure will be further described in detail below in conjunction with the accompanying drawings.
[0031] figure 1 It is a schematic structural diagram of a GaN-based blue-violet vertical cavity surface-emitting laser chip provided by an embodiment of the present disclosure. Refer to figure 1 It can be seen that the embodiment of the present disclosure provides a GaN-based blue-violet vertical cavity surface emitting laser chip, and the GaN-based blue-violet vertical cavity surface emitting laser chip includes an epitaxial wafer 1 , an n-electrode 2 and a p-electrode 3 .
[0032] Epitaxial wafer 1 includes n-GaN substrate 101 and first distributed Bragg reflector 102, quantum well active layer 103, second distributed Bragg reflector 104, p-GaN Ohmic contact layer 105 .
[0033] The first DBR 102 includes an undoped AlN / GaN sup...
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