GaN-based blue-violet light vertical cavity surface emitting laser chip and manufacturing method thereof

Abstract

The invention provides a GaN-based blue-violet light vertical cavity surface emitting laser chip and a manufacturing method thereof, and belongs to the field of semiconductor manufacturing. The first distributed Bragg reflector on the n-GaN substrate is arranged to comprise the non-doped AlN/GaN superlattice structure, the reflectivity is high, the quality is good, and the light extraction rate is improved. On the other hand, the second distributed Bragg reflector is arranged between the quantum well active layer and the p-GaN ohmic contact layer, stress is released, carrier overflow is inhibited, meanwhile, the hole barrier height is reduced, hole transmission is facilitated, and the device performance is improved. The quality and the light emitting efficiency of the obtained GaN-based blue-violet light vertical cavity surface emitting laser can be effectively improved on the whole, and stable use of the GaN-based blue-violet light vertical cavity surface emitting laser is ensured.

Description

technical field [0001] The disclosure relates to the field of manufacturing semiconductor devices, in particular to a GaN-based blue-violet vertical cavity surface-emitting laser chip and a manufacturing method thereof. Background technique [0002] Vertical cavity surface emitting laser is a common semiconductor optical device, which is often used in short-distance data networks, sensing applications and other fields. The vertical cavity surface emitting laser chip is the basic structure used to prepare the vertical cavity surface emitting laser. The vertical cavity surface emitting laser chip usually includes n-electrodes, p-electrodes and epitaxial wafers. The epitaxial wafers include n-GaN substrates and sequentially stacked on n -The first DBR (distributed Bragg reflector, distributed Bragg reflector), the quantum well active layer, the second DBR, and the p-GaN ohmic contact layer on the GaN substrate, and the n-electrode and p-electrode are respectively located on the...

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Problems solved by technology

[0003] In the blue-violet vertical cavity surface-emitting laser chip, the commonly used first DBR and second DBR are both GaN / AlGaN distributed Lagative reflective layers, but there is a large lattice loss between the GaN material and the AlGaN material. The quality of the obtained blue-violet vertical cavity surface emitting laser chip is not ideal, which affects the light extraction rate and stable use of the obtained blue-violet vertical cavity surface emitting laser.

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