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Ultrafine quantum dot film and high-resolution QLED preparation method thereof

A fine quantum and thin film preparation technology, applied in the field of high-resolution QLED preparation, can solve the problems of device performance degradation, hindered charge transfer, uneven pixel quality, etc., to achieve the effect of uniform pixel points, simple process and easy operation

Pending Publication Date: 2022-01-14
FUZHOU UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, previous quantum dot patterning techniques have limitations in achieving uniform pixel arrays with this level of ultra-high resolution and fidelity
For example, previously reported photolithography techniques degrade device performance due to process-generated organic residues that hinder charge transport.
Additionally, during contact printing, imprinting of structured stamps can cause sagging and tilting of the elastic stamp structure, which reveals uneven pixel quality

Method used

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  • Ultrafine quantum dot film and high-resolution QLED preparation method thereof
  • Ultrafine quantum dot film and high-resolution QLED preparation method thereof
  • Ultrafine quantum dot film and high-resolution QLED preparation method thereof

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Effect test

Embodiment 1

[0031] A schematic diagram of the process flow of an ultra-fine quantum dot thin film and its high-resolution QLED preparation method, as shown in figure 1 shown. Specifically include the following steps:

[0032] (1) Preparation of a photoresist bank template: a layer of photoresist was statically spin-coated on a glass substrate at a rotation speed of 3000 rpm for 45 s. Then, using a patterned mask (the diameter of a single pixel hole is 1 μm), the photoresist under each pixel hole is exposed to ultraviolet rays, and then washed away by developing. The remaining photoresist forms a bank-shaped template with a diameter of 500nm.

[0033] (2) Generation of ultra-fine quantum dot films: Red CdSe quantum dots were self-assembled onto PDMS stamps using LB film technology. Then, the above-mentioned PDMS stamp is brought into contact with the photoresist bank template and heated at 80°C. During the heating process at 80°C, the viscosity of PDMS weakens, causing the quantum dots...

Embodiment 2

[0036] (1) Preparation of a photoresist bank template: a layer of photoresist was statically spin-coated on a glass substrate at a rotation speed of 3000 rpm for 45 s. Then, using a patterned mask (the diameter of a single pixel hole is 1 μm), the photoresist under each pixel hole is exposed to ultraviolet rays, and then washed away by developing. The remaining photoresist forms a bank-shaped template with a diameter of 500nm.

[0037] (2) Generation of ultra-fine quantum dot films: red InP quantum dots were self-assembled onto PDMS stamps by spin-coating film formation method. Then, the above-mentioned PDMS stamp is brought into contact with the photoresist bank template and heated at 80°C. During the heating process at 80°C, the viscosity of PDMS weakens, causing the quantum dots in the contact part to be taken away by the photoresist tape, and the remaining quantum dots form ultra-fine pixel patterns. Finally, attach the PDMS stamp to the hole transport layer, press and s...

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Abstract

The invention relates to an ultrafine quantum dot film and a high-resolution QLED preparation method thereof. The method comprises the following steps: firstly, preparing a template of a pixel bank structure through a photoetching method; in addition, forming the quantum dot film on the PDMS seal through a self-assembly method; and contacting the PDMS seal with the template of the pixel bank structure, and heating the PDMS seal and the template of the pixel bank structure. The viscosity of the PDMS seal is weakened in the heating process of 80 DEG C so that the quantum dots of the contact part are taken away by a pixel bank template, and the remaining quantum dots form a hyperfine pixel pattern. Finally, the PDMS seal is attached to the hole transport layer, the PDMS seal is sequentially pressed and separated, and the hyperfine pixelated quantum dot film is transferred to the hole transport layer. According to the composition technology, the quantum dot film has hyperfine pixel points, and the prepared pixel points are uniform. And finally, the pixel size of the QLED device can be reduced to several microns or even below microns so that a high-brightness ultrahigh-resolution display pixel unit is obtained and can be applied to next-generation display.

Description

technical field [0001] The invention belongs to the technical field of high-resolution QLED preparation, and in particular relates to an ultra-fine quantum dot thin film and a high-resolution QLED preparation method thereof. Background technique [0002] With the increasing amount of displayed information in modern society, there is a higher demand for new display technology and its products. The new requirements of next-generation displays are mainly reflected in high resolution and high color gamut. Compared with new display technologies such as organic light-emitting diodes (OLEDs), micro-LEDs (micro-LEDs), and laser displays, quantum dot light-emitting diodes (QLEDs) achieve high The possibility of resolution has broad prospects. [0003] However, previous quantum dot patterning techniques have limitations in achieving uniform pixel arrays with this level of ultra-high resolution and fidelity. For example, previously reported lithography techniques degrade device perf...

Claims

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Application Information

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IPC IPC(8): H01L51/56H01L51/50
CPCH10K71/135H10K71/15H10K71/80H10K50/115H10K71/00Y02E10/549
Inventor 胡海龙李福山孟汀涛赵等临郭太良
Owner FUZHOU UNIV