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Film bulk acoustic resonator and manufacturing method thereof

A thin-film bulk acoustic wave and manufacturing method technology, which is applied to electrical components, impedance networks, etc., can solve the problems that the quality factor cannot be further improved, and cannot meet the high-performance radio frequency system, so as to suppress the loss of transverse acoustic wave energy, suppress the loss of shear wave, and improve The effect of quality factor

Pending Publication Date: 2022-01-14
NINGBO SEMICON INT CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the quality factor (Q) of the cavity-type thin-film bulk acoustic resonator produced at present cannot be further improved, so it cannot meet the needs of high-performance radio frequency systems.

Method used

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  • Film bulk acoustic resonator and manufacturing method thereof
  • Film bulk acoustic resonator and manufacturing method thereof
  • Film bulk acoustic resonator and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Embodiment 1 of the present invention provides a thin film bulk acoustic resonator, figure 1 It is a structural schematic diagram of the thin film bulk acoustic resonator in Embodiment 1 of the present invention, please refer to figure 1 , the thin film bulk acoustic resonator includes:

[0042] The stacked extraction electrode 201, the piezoelectric layer 202 and the external electrode 203, the effective resonance area includes the area where the extraction electrode 201, the piezoelectric layer 202 and the external electrode 203 overlap each other in a direction perpendicular to the surface of the piezoelectric layer 202, The outside of the effective resonance area is an invalid area;

[0043] A first dielectric layer 101, a first gap 211 is provided between the surface of the first dielectric layer 101 and the surface of the extraction electrode 201;

[0044] A second dielectric layer 102, a second gap 221 is provided between the surface of the second dielectric la...

Embodiment 2

[0060] Embodiment 2 of the present invention provides a thin film bulk acoustic resonator, figure 2 It is a schematic structural diagram of a thin film bulk acoustic resonator in Embodiment 2 of the present invention. The difference between this embodiment and Embodiment 1 is that in this embodiment, the resonant part 2021 of the piezoelectric layer 202 is located in the effective resonant region, and the overlapping part 2022 is located in the Outside the effective resonance area, the resonance part 2021 and the overlapping part 2022 are separated from each other. Please refer to figure 2 , the specific structure is as follows:

[0061] The first gap 211 and the second gap 221 communicate with each other to form a cavity, the resonant part 2021 is completely located in the cavity, the overlapping part 2022 is located outside the cavity, and the overlapping part 2022 and the resonant part 2021 are completely separated, so that the outer circumference of the resonant part 20...

Embodiment 3

[0063] Embodiment 3 of the present invention provides a thin film bulk acoustic resonator, image 3 It is a schematic structural diagram of a thin-film bulk acoustic resonator according to Embodiment 3 of the present invention. The difference between this embodiment and Embodiment 1 is that the piezoelectric layer 202 is a complete film layer, and the overlapping part 2022 and the resonance part 2021 are connected together. One structure. A part of the conductive column 401 is located at the edge of the second gap 221 and is in contact with the second dielectric layer 102 , and a part is located in the second gap 221 with a distance from the boundary of the second gap 221 . The conductive pillars 401 can also all be located at the edge of the second gap 221, or the conductive pillars 401 are not in contact with the edge of the second gap 221.

[0064] In the above embodiments 1 to 3, the external electrodes are located above the lead-out electrodes, but in these embodiments, ...

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Abstract

The invention relates to a film bulk acoustic resonator and a manufacturing method thereof, the film bulk acoustic resonator comprise:s an extraction electrode, a piezoelectric layer and an external electrode which are stacked, wherein an effective resonance area comprises an area where the extraction electrode, the piezoelectric layer and the external electrode are mutually overlapped in the direction perpendicular to the surface of the piezoelectric layer, and an ineffective area is arranged outside the effective resonance area; a first dielectric layer, wherein a first gap is formed between the surface of the first dielectric layer and the surface of the extraction electrode, and the part, extending out of the first gap from the effective resonance region, of the extraction electrode is a first extraction part; a second dielectric layer, wherein a second gap is formed between the surface of the second dielectric layer and the surface of the external electrode, wherein the external electrode is positioned in an area enclosed by the second gap or the boundaries of the external electrode and the second gap are overlapped; a conductive column, wherein one end of the conductive column is connected to the external electrode, the other end of the conductive column is connected with a second extraction part, the second extraction part extends out of the second gap from the effective resonance area, and one of the extraction electrode and the external electrode is positioned above the other one.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to a thin-film bulk acoustic resonator and a manufacturing method thereof. Background technique [0002] Since the development of analog RF communication technology in the early 1990s, RF front-end modules have gradually become the core components of communication equipment. Among all RF front-end modules, filters have become the components with the fastest growth momentum and the greatest development prospects. With the rapid development of wireless communication technology and the maturity of 5G communication protocols, the market has also put forward stricter standards for the performance of RF filters in all aspects. The performance of a filter is determined by the resonator units that make up the filter. Among the existing filters, the film bulk acoustic resonator (FBAR) has the characteristics of small size, low insertion loss, large out-of-band suppression,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/17H03H3/02H03H9/02
CPCH03H9/173H03H9/02015H03H3/02H03H2003/023H03H9/17H03H9/02
Inventor 黄河
Owner NINGBO SEMICON INT CORP
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