Gallium oxide crystal growth method based on edge-defined film-fed growth device
A crystal growth and growth device technology, applied in crystal growth, chemical instruments and methods, single crystal growth, etc., can solve the problem of inability to remove crystal miscellaneous crystals, etc., and achieve the effect of direct and fast, accurate and efficient positioning
Pending Publication Date: 2022-01-21
HANGZHOU FUJIA GALLIUM TECH CO LTD
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Problems solved by technology
[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a method for growing gallium oxide crystals based on a guided-mode growth device, aiming at solving the problem of preparing β-Ga by the existing guided-mode method. 2 o 3 The problem that the impurity crystals grown on the crystal cannot be removed during the single crystal process
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[0019] The present invention provides a gallium oxide crystal growth method based on a guided mode growth device. In order to make the purpose, technical solution and effect of the present invention clearer and clearer, the present invention will be further described in detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0020] Those skilled in the art can understand that, unless otherwise defined, all terms (including technical terms and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which this invention belongs. It should also be understood that terms, such as those defined in commonly used dictionaries, should be understood to have meanings consistent with their meaning in the context of the prior art, and unless specifically defined as herein, are not intended to be idealized or overly Form...
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Abstract
The invention discloses a gallium oxide crystal growth method based on an edge-defined film-fed growth device.The gallium oxide growth device comprises a gallium oxide crystal growth furnace and a laser-assisted heater arranged on the side edge of the gallium oxide crystal furnace. The crystal growth method comprises steps: during the crystal growth process, when the mixed crystal appears on the gallium oxide crystal, laser is emitted by the laser-assisted heater and is irradiated on the mixed crystal, and the mixed crystals are removed. According to the invention,the laser emitted by the laser-assisted heater is used for heating and melting the mixed crystals appearing on the gallium oxide crystal, the effect is direct and rapid, and positioning is accurate and efficient; and according to the invention, the technical problem that mixed crystals are generated at a solid-liquid interface near a mold opening due to unpredictable tiny disturbance in the process of growing the gallium oxide crystals by the edge-defined film-fed growth method is effectively solved.
Description
technical field [0001] The invention relates to the technical field of gallium oxide crystal preparation, in particular to a gallium oxide crystal growth method based on a guided mode growth device. Background technique [0002] β-Ga 2 o 3 (Gallium oxide) is a semiconductor material with a direct bandgap and a wide bandgap, and the bandgap width is about 4.8-4.9eV. It has many advantages such as wide band gap, fast saturated electron drift, high thermal conductivity, high breakdown field strength, stable chemical properties, etc. It has broad application prospects in the field of high temperature, high frequency, and high power power electronic devices. In addition, it can also be used for LED chips, solar-blind ultraviolet detection, various sensor components and imaging components, etc. [0003] At present, the batch preparation of large-sized gallium oxide crystals mainly adopts the guided mode preparation technology. The guided-mode growth of gallium oxide crystals i...
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IPC IPC(8): C30B29/16C30B15/34C30B15/16
CPCC30B29/16C30B15/34C30B15/16
Inventor 陈端阳齐红基赛青林
Owner HANGZHOU FUJIA GALLIUM TECH CO LTD