The invention relates to the technical field of LED production, and in particular to a method for producing an LED
chip without
etching and the LED
chip. An innovative positioning means for an N-type
semiconductor layer is proposed, and an N-
electrode is produced on the side of the positioning position, thereby omitting the
etching process steps in the conventional LED
chip production process, simplifying the operation flow, and improving the work efficiency. The method comprises the following operation steps: S1, sequentially growing an epitaxial layer structure of an N-type
semiconductor layer, a light-emitting layer, and a P-type
semiconductor layer on the front side of a substrate; S2, producing a P-
electrode above the P-type semiconductor layer; S3, determining that the thickness of the N-type semiconductor layer is X according to the epitaxial layer structure grown in step S1, the thickness from the bottom of the N-type semiconductor layer to the top of the P-type semiconductor layer is Y, and the
total thickness of the light-emitting layer and the P-type semiconductor layer is Z, and the position of the N-
electrode is set within a range of Y-Z to Y from the top of the P-type semiconductor layer; S4, producing the N-electrode on the side within the position range of the N-electrode determined in step S3.