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Low-viscosity epoxy potting material for packaging silicon carbide power module as well as preparation method and application of low-viscosity epoxy potting material

A power module and low-viscosity technology, applied in the field of materials, can solve problems such as high viscosity and complex operation process, and achieve the effects of low viscosity and CTE value, good manufacturability and good thermal stability

Active Publication Date: 2022-01-28
湖南国芯半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing epoxy potting materials still have the defect of high viscosity, so both the resin and the module need to be preheated to meet the potting process requirements, and the operation process is relatively complicated

Method used

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  • Low-viscosity epoxy potting material for packaging silicon carbide power module as well as preparation method and application of low-viscosity epoxy potting material
  • Low-viscosity epoxy potting material for packaging silicon carbide power module as well as preparation method and application of low-viscosity epoxy potting material
  • Low-viscosity epoxy potting material for packaging silicon carbide power module as well as preparation method and application of low-viscosity epoxy potting material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] A low-viscosity epoxy potting compound for silicon carbide power module packaging, comprising A component and B component, the mass ratio of the two is 1:1; A component includes the following raw material components in parts by weight:

[0058]

[0059] Component B is mainly composed of the following components by weight:

[0060]

[0061]

[0062] In this embodiment, the mass ratio of methyl tetrahydrophthalic anhydride to methyl nadic anhydride is 1:1.

[0063] A method for preparing the low-viscosity epoxy potting compound for encapsulating silicon carbide power modules in the present embodiment, comprising the following steps:

[0064] (1) The preparation process of component A is as follows: 40 parts of 3,4-epoxycyclohexylmethyl 3,4-epoxycyclohexyl carboxylate, 35 parts of high-purity epoxy DER331, 5 parts of WACKER GENIOPERL P52 nano Mix the core-shell toughener evenly at 40°C, add 1 part of UM-636, 35 parts of silicon micropowder and 1 part of carbon bl...

Embodiment 2

[0069] A low-viscosity epoxy potting compound for silicon carbide power module packaging, comprising A component and B component, the mass ratio of the two is 5:1; A component includes the following raw material components in parts by weight:

[0070]

[0071] Component B is mainly composed of the following components by weight:

[0072]

[0073] In this embodiment, the mass ratio of methyl tetrahydrophthalic anhydride to methyl nadic anhydride is 3:1.

[0074] A method for preparing the low-viscosity epoxy potting compound for encapsulating silicon carbide power modules in the present embodiment, comprising the following steps:

[0075] (1) The preparation process of component A is as follows: 65 parts of bis((3,4-epoxycyclohexyl)methyl)adipate, 60 parts of high-purity epoxy DER332, and 10 parts of WACKER GENIOPERL P52 nano core-shell toughening Mix the agent evenly at 60°C, add 5 parts of UM-996, 70 parts of silicon micropowder and 3 parts of carbon black, carry out h...

Embodiment 3

[0079] A low-viscosity epoxy potting compound for silicon carbide power module packaging, comprising A component and B component, the mass ratio of the two is 3:1; A component includes the following raw material components in parts by weight:

[0080]

[0081] Component B is mainly composed of the following components by weight:

[0082]

[0083] In this embodiment, the mass ratio of methyl tetrahydrophthalic anhydride to methyl nadic anhydride is 2:1.

[0084] A method for preparing the low-viscosity epoxy potting compound for encapsulating silicon carbide power modules in the present embodiment, comprising the following steps:

[0085] (1) The preparation process of component A is as follows: 50 parts of bis(7-oxabicyclo[4.1.0]3-heptylmethyl)adipate, 55 parts of high-purity epoxy DER332, and 8 parts of Wacker GENIOPERL P52 Mix the nano-core-shell toughener evenly at 50°C, add 1 part of UM-998, 60 parts of silicon micropowder and 2 parts of carbon black, perform high-s...

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Abstract

The invention discloses a low-viscosity epoxy potting material for packaging a silicon carbide power module and a preparation method and application of the material. The epoxy potting material is obtained by mixing a component A and a component B. The component A is prepared from low-viscosity alicyclic epoxy resin, high-purity bisphenol A epoxy resin, a nanometer core-shell toughening agent, a coupling agent, silica powder and carbon black; and the component B comprises a curing agent A, a curing agent B, a latent accelerator and silica powder. The epoxy potting material disclosed by the invention has the advantages of very low viscosity and CTE value, long operation time and high manufacturability, can be used for directly potting a silicon carbide power module, and can be used for well improving the integrity and impact resistance of the module; the epoxy potting material has very great significance in better meeting the packaging process requirements of the silicon carbide power module and expanding the popularization and application of the epoxy potting material in the packaging of the silicon carbide power module, and also has the advantages of high use value, good application prospect, simple preparation method process, convenience in operation and the like, can realize large-scale preparation, and is suitable for industrial production.

Description

technical field [0001] The invention belongs to the field of materials, and relates to a low-viscosity epoxy potting compound for silicon carbide power module packaging, a preparation method and application thereof. Background technique [0002] Epoxy trees have excellent electrical insulation and are widely used in the potting field of power electronic devices. For example, the encapsulation on 3300V and 6500V high-voltage and high-current IGBT modules such as rail traction is generally performed after silicone gel potting is completed. Epoxy glue potting, after curing, a layer of dense and hard protective layer is formed on the upper layer of silicone gel, so as to improve the integrity of the module and have good practical significance for improving the mechanical impact resistance of the module. However, with the development of SiC power modules, new challenges are posed to traditional silicone gels. Silicon carbide power modules have the characteristics of high frequen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09J163/00C09J163/02C09J11/08C08G59/42C08G59/40H01L23/29
CPCC09J163/00C09J11/08C08G59/4284C08G59/58C08G59/4021H01L23/295C08L63/00
Inventor 曾亮柯攀戴小平刘洋刘亮黄蕾杜隆纯
Owner 湖南国芯半导体科技有限公司
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