Oxygen-reducing crystal pulling process and quartz crucible
A quartz crucible and process technology, which is applied in the field of monocrystalline silicon production, can solve problems such as the increase of oxygen content in monocrystalline silicon, and achieve the effects of reducing oxygen content, smooth exhaust, and increasing production capacity
Pending Publication Date: 2022-01-28
双良硅材料(包头)有限公司
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Problems solved by technology
[0004] In view of this, the embodiment of the present invention provides an oxygen-reducing crystal pulling process and a quartz crucible to solve the problem of large thermal field (quartz crucible of 32 inches and above), large size ( M10 and above) silicon wafers are introduced, which makes the oxygen content of single crystal silicon gradually increase.
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[0030] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0031] In this application, the term "comprises", "comprises" or any other variation thereof is intended to cover a non-exclusive inclusion such that a process, method, article, or apparatus comprising a set of elements includes not only those elements, but also includes none. other elements specifically listed, or also include elements inherent in such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "com...
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Abstract
The invention discloses an oxygen-reducing crystal pulling process and a quartz crucible. When a silicon material fed for the first time is melted, argon is introduced, and furnace pressure is controlled to be preset furnace pressure through furnace pressure control; the furnace pressure is closed, a main pump is started, and the silicon material is fed again; and after the silicon material is re-fed, the furnace pressure is controlled to be closed at a second preset time interval. Through the oxygen reduction and crystal pulling technology, discharging of volatile matter generated in the high-temperature material melting period can be accelerated, SiO attached to the exhaust pipeline is reduced, the situation that generated SiO cannot be discharged in time due to the fact that SiO is attached to the exhaust pipeline is avoided, it is guaranteed that the exhaust pipeline can exhaust gas smoothly, furthermore, dissolving of SiO in the volatile matter in the liquid silicon can be reduced, the oxygen content in the liquid silicon is reduced, oxygen reverse cutting is avoided, and the crystallization rate is effectively improved, so that the productivity is improved.
Description
technical field [0001] The invention relates to the field of monocrystalline silicon production, in particular to an oxygen-reducing crystal pulling process and a quartz crucible. Background technique [0002] The current demand for energy is huge. Due to problems such as reserves and environmental protection, the demand for traditional energy is gradually declining due to the carbon neutrality goals of various countries, while the demand for clean and low-cost energy is increasing day by day. Among them, solar photovoltaic has the advantage of high efficiency and low cost, so it has a greater potential. Prospects. Monocrystalline silicon, which is the starting material for solar photovoltaic manufacturing of semiconductor electronic components, is generally prepared by the Czochralski method, that is, using a crystal pulling device purified by a continuous argon flow, in which polycrystalline silicon is loaded into a quartz crucible, and then the polycrystalline silicon is ...
Claims
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IPC IPC(8): C30B15/00C30B15/10C30B29/06C30B15/02C30B15/20
CPCC30B15/00C30B15/10C30B29/06C30B15/02C30B15/20
Inventor 黄晶晶吴刚鞠贵冬王新强
Owner 双良硅材料(包头)有限公司