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Manufacturing method of shield gate MOSFET device

A manufacturing method and shielding grid technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., to achieve the effect of reducing manufacturing costs

Active Publication Date: 2022-01-28
安建科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of the problems of the existing shielded gate trenched field effect transistor devices mentioned above, it is necessary to propose a shielded gate trenched field effect transistor structure and process flow with simple process and low manufacturing cost

Method used

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  • Manufacturing method of shield gate MOSFET device
  • Manufacturing method of shield gate MOSFET device
  • Manufacturing method of shield gate MOSFET device

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Embodiment Construction

[0042] The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments. It should be pointed out that in the following description of the shielded gate trench field effect transistor device and its manufacturing method of the present invention, the semiconductor substrate of the shielded gate trench field effect transistor device is considered to be made of silicon (Si) material. However, the substrate can also be made of any other material suitable for the manufacture of shielded gate trench field effect transistors, such as gallium nitride (GaN), silicon carbide (SiC) and so on. In the following description, the conductivity type of the semiconductor region is divided into P-type (second conductivity type) and N-type (first conductivity type), and a P-type conductivity type semiconductor region can be obtained by doping one or Composed of several impurities, these impurities can be but not limited to: boron (B), aluminum ...

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Abstract

The invention relates to a power semiconductor device, in particular to a manufacturing method of a shield gate MOSFET device. According to the invention, through reasonable means, a hard mask is utilized to the greatest extent in different manufacturing steps, a unique manufacturing process flow is formed, one to two photoetching steps can be saved, and the manufacturing cost is effectively reduced.

Description

technical field [0001] The invention relates to a power semiconductor device, in particular to the structure and manufacturing method of a shielded gate trench type field effect transistor device. Background technique [0002] The related technical background of the existing shielded gate trench field effect transistor will be described below. It should be pointed out that the corresponding positional words described in this document are such as "up", "down", "left", "right", "front", "back", "vertical", "horizontal", "vertical " is the relative position corresponding to the reference illustration. The fixed direction is not limited in specific implementation. It should be pointed out that the devices in the drawings are not necessarily drawn to a specific scale. The straight line shown by the boundary of the doped region and the trench in the drawings, as well as the sharp angle formed by the boundary, are generally not straight lines and precise angles in practical appl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/423H01L29/78
CPCH01L29/66621H01L29/4236H01L29/7813Y02B70/10
Inventor 伍震威梁嘉进单建安
Owner 安建科技有限公司
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