Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Back grinding tape

A back-grinding, one-side technology, used in abrasives, bulk chemical production, manufacturing tools, etc., can solve the problems of semiconductor wafer circuit damage and foreign matter attached to semiconductor wafers

Pending Publication Date: 2022-01-28
株式会社力森诺科
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In addition, conventionally, when peeling the back grinding tape from the semiconductor wafer, static electricity called peeling electrification may be generated, and the circuit of the semiconductor wafer may be destroyed, or foreign matter may adhere to the semiconductor wafer.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Back grinding tape

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0206] Hereinafter, the present invention will be described more concretely by way of examples and comparative examples. In addition, the present invention is not limited only to the following examples.

[0207]

[0208] In a reactor equipped with a thermometer, a stirrer, a dropping funnel, and a cooling pipe with a drying pipe, 0.55 kg of a hydrogenated product of diphenylmethane diisocyanate (Desmogluer W, manufactured by Sumika Cobestorouletan) was added ( 2.1 mol), 4.01 kg (2.0 mol) of polypropylene glycol (Actocol D-2000; produced by Mitsui Chemicals, number average molecular weight 2000) having a hydroxyl group at the end with a hydroxyl value of 56 mgKOH / g, and di Octyltin (Neostan U-810, manufactured by Nitto Kasei Co., Ltd.) 0.8 g.

[0209] Then, the temperature of the reactor was raised to 60° C. and the reaction was carried out for 4 hours to obtain a polyurethane having isocyanate groups at both terminals as a precursor of the polyurethane (A). Next, 23.22 g (...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
melting pointaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

A back grinding tape having a sheet-shaped substrate and an adhesive agent layer formed on one surface of the substrate, wherein the adhesive agent layer comprises a cured product of an adhesive agent composition and is 50-500 [mu]m thick, the adhesive agent composition includes a polyurethane (A), a (meth)acrylate monomer (B), a chain transfer agent (C), a photopolymerization initiator (D), and 0.4-6 mass% of an ionic liquid (E), and the polyurethane (A) includes a polyurethane (a1) having a skeleton that includes a structure derived from a polyoxyalkylene polyol and a structure derived from a polyisocyanate, and having (meth)acryloyl groups at a plurality of ends.

Description

technical field [0001] The present invention relates to a back grinding tape suitable for use in semiconductor wafer processing. [0002] This application claims priority based on Japanese Patent Application No. 2019-162092 filed in Japan on September 5, 2019, and the content thereof is incorporated herein. Background technique [0003] In accordance with the demand for thinning semiconductor devices, a back grinding process of semiconductor wafers is performed in the manufacturing process of semiconductor devices. In the back grinding process of the semiconductor wafer, after the surface (front surface) of the semiconductor wafer is protected with a back grinding tape, the back surface of the semiconductor wafer is ground to reduce the thickness of the semiconductor wafer. [0004] Conventionally, various back grinding tapes used to protect the surface of a semiconductor wafer have been proposed. In recent years, backgrinding tapes having sufficient unevenness absorption ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B24D11/00B24D11/02
CPCB24D11/00B24D11/02H01L21/304C09J11/06C09J7/38C09J175/04Y02P20/54C09J175/14
Inventor 池谷达宏中西健一
Owner 株式会社力森诺科
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com