Embedded on-chip micro-channel Si-based GaN HEMT device and preparation method thereof

Abstract

The invention relates to an embedded on-chip micro-channel Si-based GaN HEMT device and a preparation method thereof, and belongs to the technical field of novel semiconductor device thermal management. The device comprises a gate function layer, a source function layer, a drain function layer, a SiN passivation layer, an AlGaN barrier layer, a GaN buffer layer and a micro-flow structure Si substrate sequentially distributed from top to bottom; the micro-flow structure Si substrate comprises a manifold type heat dissipation micro-flow structure which is divided into a micro-flow structure heat transfer area and a drainage structure area; the micro-flow structure heat transfer area is in direct contact with the GaN buffer layer, a micro-flow channel of the drainage structure area is perpendicular to and communicated with a micro-flow channel of the micro-flow structure heat transfer area, so that the manifold micro-flow heat dissipation structure can be formed. The embedded on-chip micro-channel Si-based GaN HEMT device disclosed by the invention has the advantage of high-efficiency heat dissipation capability, and can be used for a super-power microwave power device.

Description

technical field [0001] The invention relates to an embedded micro-channel Si-based GaNHEMT device and a preparation method thereof, belonging to the technical field of thermal management of new semiconductor devices. [0002] technical background [0003] The new third-generation semiconductor materials represented by GaN have unique advantages such as wide band gap, high breakdown field strength, high electron saturation velocity, high-voltage and high-temperature resistance, and their characteristics are much higher than those of the first and second-generation semiconductor materials represented by GaAs and Si. Semiconductor materials are extremely suitable for high-power and high-frequency devices. They have attracted widespread attention in the military field represented by radar and electronic countermeasures, and in the civilian field represented by 5G base stations and fast charging. AlGaN / GaN high electron mobility transistors ( HEMT) is currently developing towards ...

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Problems solved by technology

However, in the existing technology, even the in-chip microfluidic technology with better effect, the microfluidic channel is realized by backside etching. Due to the limited thickness of the material itself and the limited etching depth ratio, the microfluidic channel is far from the There is still a certain distance from the heat source, so it is still limited by the thermal conductivity of the substrate material itself to a certain extent

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