Power module with at least two power semiconductor assemblies contacted on a substrate
A technology of power semiconductors and power modules, applied in the direction of converting AC power input to DC power output, semiconductor devices, output power conversion devices, etc., can solve the problems of power module failure, heating, etc., and achieve the effect of improved heat dissipation
Pending Publication Date: 2022-02-22
SIEMENS AG
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In addition, adjacently arranged semiconductor components can heat up against each other (in particular very strongly), leading to failure of the power module
Method used
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[0032] figure 1 A schematic representation of a first embodiment of a power module 2 is shown. The power module 2 has two contacting power semiconductor arrangements 6 , 8 with semiconductor components 10 on a substrate 4 . The semiconductor components 10 are embodied as transistors T, in particular insulated gate bipolar transistors (IGBTs), metal oxide semiconductor field effect transistors (MOSFETs) or field effect transistors or diodes D, for example. The power semiconductor arrangements 6 , 8 each have, for example, three transistors T and three diodes D. An anti-parallel diode D is assigned to at least one transistor T in particular. The number of semiconductor components 10 is variable. For example, the first power semiconductor arrangement 6 can have two transistors T, two (in particular antiparallel) diodes D, which are especially arranged in a tessellation, while the two power semiconductor arrangements 8 have two transistors T and two (in particular antiparallel ...
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Abstract
The invention relates to a power module with at least two power semiconductor assemblies contacted on a substrate. The power module includes at least two power semiconductor arrangements (6, 8), in contact with substrate (4) and arranged in a housing (18). To improve the reliability of the power module (2), each of the semiconductor arrangements (6, 8) has at least one semiconductor component, power connectors (DCp, DCn, AC) are arranged on opposite sides (20, 22) of the housing (18), wherein supply lines (24) extending from the power connectors (DCp, DCn, AC) to the power semiconductor arrangements (6, 8) are arranged on the substrate (4) in such a manner that electrical current is provided in a symmetrical manner.
Description
technical field [0001] The invention relates to a power module having at least two power semiconductor arrangements contacting on a substrate and arranged in a housing. [0002] The invention also relates to a converter having at least one such power module. [0003] Furthermore, the invention relates to a method for producing such a power module. Background technique [0004] Usually, in such converters, the power module sealed by the housing (for example via a solid metal plate) is screwed onto the heat sink. A converter is, for example, a rectifier, an inverter, a frequency converter or a DC transformer. The maximum output power of such a power module is limited in particular by the housing and the associated external dimensions. Optimizing the arrangement of the semiconductor components and current paths with respect to the installation space can in particular lead to the fact that, for example, the parallel connection of the semiconductor components is not optimally ...
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IPC IPC(8): H01L25/18H01L23/498H01L23/367H01L21/50H02M1/00H02M7/00
CPCH01L25/18H01L23/49838H01L23/49844H01L23/367H01L21/50H02M1/00H02M7/003H01L23/5386H01L23/057H01L25/072H01L2224/4846H01L2924/19107H01L2224/48139H01L2224/49111H01L2224/0603H05K5/0065H05K5/0091
Inventor 罗伯特·戈斯波斯卢茨·纳米斯洛贝恩德·屈滕费利克斯·蔡斯迈克尔·恩德雷斯西尔维奥·赫内彼得罗·博塔佐利
Owner SIEMENS AG