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Light-emitting diodes and light-emitting devices

A technology of light-emitting diodes and light-emitting light sources, which is applied in the direction of semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve problems such as damage, achieve the effects of increasing electrical conductivity, reducing operating voltage, and improving the effect of lateral diffusion

Active Publication Date: 2022-05-17
QUANZHOU SANAN SEMICON TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It is worth noting that although light-emitting diodes have the above-mentioned many advantages, the existing light-emitting diodes are often damaged by electrostatic discharge (Electro-Static Discharge, ESD)

Method used

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  • Light-emitting diodes and light-emitting devices
  • Light-emitting diodes and light-emitting devices
  • Light-emitting diodes and light-emitting devices

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Embodiment Construction

[0027] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of the embodiments of the present invention, rather than all embodiments; the technical features designed in the different embodiments of the present invention described below can be combined as long as they do not constitute conflicts; based on the embodiments of the present invention, the present invention All other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0028] In describing the present invention, it should be understood that the terms "central", "lateral", "upper", "lower", "left", "right", "vertical", "hori...

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Abstract

The invention provides a light emitting diode, which includes an epitaxial structure, a transparent current spreading layer, a first electrode and a second electrode, the epitaxial structure includes a first semiconductor layer, a light emitting layer and a second semiconductor layer stacked in sequence, and the transparent current spreading layer is located in the On the second semiconductor layer, the first electrode and the second electrode are respectively electrically connected to the first semiconductor layer and the transparent current spreading layer, wherein the transparent current spreading layer comprises a second transparent current spreading layer and a first transparent current spreading layer stacked in sequence, The first transparent current spreading layer is doped with Al metal. With this arrangement, the electrostatic protection capability of the light-emitting diode can be effectively improved, so that the light-emitting diode has a high ESD resistance capability.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a light emitting diode and a light emitting device. Background technique [0002] Light Emitting Diode (LED for short) is a semiconductor light-emitting element, usually made of semiconductors such as GaN, GaAs, GaP, GaAsP, etc. Its core is a PN junction with light-emitting characteristics. The region is injected into the P region, holes are injected from the P region into the N region, and a part of the minority carriers entering the opposite region recombine with the majority carriers to emit light. LED has the advantages of high luminous intensity, high efficiency, small size, and long service life, and is considered to be one of the most potential light sources at present. It should be noted that although LEDs have many advantages mentioned above, existing LEDs are often damaged due to Electro-Static Discharge (ESD). Therefore, how to avoid the damage of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/14H01L23/60
CPCH01L33/14H01L23/60H01L33/145H01L33/46H01L33/325
Inventor 王绘凝夏宏伟马全扬刘士伟卓佳利杨硕林素慧张中英
Owner QUANZHOU SANAN SEMICON TECH CO LTD
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