Thermal control multi-zone indium antimonide perfect wave absorber and application thereof
A technology of indium antimonide and absorber, which is applied in the field of thermally controlled multi-band indium antimonide perfect absorber, can solve the problem that the research on the number of adjustable resonance absorption peaks is rarely reported, and achieve high refraction The effect of rate sensitivity
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0038] refer to Figure 1-2 , which is the structure design and top view of thermally controlled multi-band InSb perfect absorber. This structure has three layers, the upper layer is a symmetrical bracket-shaped indium antimonide array with a thickness of 0.8 μm, and the middle layer is a dielectric plate (SiO2) with a dielectric constant of 3.09 and a thickness of 15 μm. 2 ), the conductivity of the bottom layer is 4.09×10 7 S / m of metal. The structural unit parameters are: w 1 =w 2 =5μm, l 1 =15μm, l 2 = 5 μm, the space between square brackets d = 7.4 μm. The period of the structural unit along the x and y directions is P x =P y = 35 μm. Semiconductor indium antimonide is very sensitive to ambient temperature. In the terahertz range, the dielectric constant of indium antimonide is: Can be determined by the Drude model. where the high-frequency dielectric constant ε ∞ =1.68, the plasma frequency is The carrier density is
Embodiment 2
[0040] refer to Figure 1-2 , which is the structure design and top view of thermally controlled multi-band InSb perfect absorber. This structure has three layers, the upper layer is a symmetrical bracket-shaped indium antimonide array with a thickness of 0.75 μm, and the middle layer is a dielectric plate (SiO 2 ), the conductivity of the bottom layer is 4.09×10 7 S / m of metal. The structural unit parameters are: w 1 =5μm,w 2 = 3μm, l 1 = 14.9 μm, l 2 = 4.9 μm, the space between square brackets d = 5.4 μm. The period of the structural unit along the x and y directions is P x =P y = 34.5 μm. Semiconductor indium antimonide is very sensitive to ambient temperature. In the terahertz range, the dielectric constant of indium antimonide is: Can be determined by the Drude model. where the high-frequency dielectric constant ε ∞ =1.68, the plasma frequency is The carrier density is
Embodiment 3
[0042] refer to Figure 1-2 , which is the structure design and top view of thermally controlled multi-band InSb perfect absorber. This structure has three layers, the upper layer is a symmetrical bracket-shaped indium antimonide array with a thickness of 0.85 μm, and the middle layer is a dielectric plate with a dielectric constant of 3.09 and a thickness of 15.5 μm (SiO 2 ), the conductivity of the bottom layer is 4.09×10 7 S / m of metal. The structural unit parameters are: w 1 =5μm,w 2 = 3μm, l 1 = 15.1 μm, l 2 = 5.1 μm, d = 7.4 μm. The period of the structural unit along the x and y directions is P x =P y = 35.5 μm. Semiconductor indium antimonide is very sensitive to ambient temperature. In the terahertz range, the dielectric constant of indium antimonide is: Can be determined by the Drude model. where the high-frequency dielectric constant ε ∞ =1.68, the plasma frequency is The carrier density is
PUM
Property | Measurement | Unit |
---|---|---|
Thickness | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Conductivity | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com