Silicon carbide crystal growing device

Abstract

The invention discloses a silicon carbide crystal growing device, which comprises a furnace body, a silicon carbide crystal growing device and a silicon carbide crystal growing device, the heating device is used for heating the reaction cavity; the clamping assembly comprises a plurality of seed crystal clamping parts, and the seed crystal clamping parts are arranged in the reaction cavity and are used for clamping seed crystals; the rotation driving assembly comprises a plurality of first rotation driving parts, the first rotation driving parts are connected with the seed crystal clamping part through first connecting pieces, and each first rotation driving part can independently drive the seed crystal clamping part to rotate around the central axis of the seed crystal clamped by the first rotation driving part; and the rotation directions of the seed crystals (101) are the same, so that the flowing directions of gas close to two adjacent seed crystals are opposite. Therefore, the edge temperature of the growth crystal can be homogenized, a stable SixCy steam substance mass diffusion flux is established between the silicon carbide powder and the surface of the seed crystal, and the crystal quality is improved by adjusting the crystal growth mode and inhibiting the formation of polycrystalline at the edge of the growth crystal.

Description

technical field [0001] The invention relates to the technical field of semiconductor material preparation, in particular to a silicon carbide crystal growth device. Background technique [0002] At present, in the process of growing silicon carbide single crystal, it is found that the formation of polytype switches at the edge is closely related to the stacking faults defects during the initial growth of the seed crystal surface. In general, lower stacking fault energy is the physical reason for polycrystalline generation in silicon carbide crystals. Thus, the polymorphism of SiC during high-temperature PVT growth is related to unstable growth conditions. [0003] In the related art, the polycrystalline region in the silicon carbide crystal usually starts along the edge of the growth surface. In the contact area between the edge of the seed crystal and the crucible, there is a large temperature gradient and the supersaturation of the corresponding gas phase is easy to cause...

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Problems solved by technology

[0003] In the related art, the polycrystalline region in the silicon carbide crystal usually starts along the edge of the growth surface, and there is a large temperature gradient in the contact area between the edge of the seed crystal and the crucible and the supersaturation of the corresponding gas phase can easily lead to the generation of polycrystals in single crystals

The reason for this is that the region of the oblique growth interface from the seed growth face to the edge of the growth face is the region where enhanced "step bunching" occurs, thus leading to polytype transitions

Especially in the process of simultaneous growth of multiple sets of seed crystals, the crystal growth regulation of the contact part between the seed crystal and the edge of the seed crystal is unstable, and tends to undergo polymorphic transformation, which makes it impossible to ensure the production efficiency of silicon carbide crystals while ensuring the production efficiency of silicon carbide crystals. the quality of

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