Linear variable optical filter and continuous spectrum gas sensor applying same
A filter, variable technology, applied in instruments, scientific instruments, material analysis by optical means, etc., can solve the problems of large size, unsuitable for gas monitoring, bulky, etc., to improve accuracy and improve gas monitoring. Kind of effect
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Embodiment 1
[0026] like figure 1 and 2 As shown, Embodiment 1 of the present invention provides a linear variable optical filter, including a substrate 11, a tapered cavity 12, an oblique Bragg reflection layer 13 and a horizontal Bragg reflection layer 14, and the oblique Bragg reflection layer 13 and the horizontal The Bragg reflection layer 14 is disposed on the upper and lower sides of the tapered cavity 12 , and one side of the substrate 11 is connected to the horizontal Bragg reflection layer 14 .
[0027] like figure 1 and 2 As shown, the horizontal Bragg reflection layer 14 includes a first silicon dioxide layer 141, a first silicon layer 142, a second silicon dioxide layer 143 and a second silicon layer 144, the first silicon dioxide layer 141, the second silicon dioxide layer A silicon layer 142 , a second silicon dioxide layer 143 and a second silicon layer 144 are sequentially deposited on the substrate 11 by physical vapor deposition or chemical vapor deposition.
[0028]...
Embodiment 2
[0033] Taking silicon substrate, 2.5 micron ~ 5 micron variable filter as an example, its manufacturing method includes the following steps:
[0034] S1: cleaning the substrate 11, and ultrasonically cleaning the substrate with acetone, alcohol, and deionized water in sequence;
[0035] S2: Deposit a first silicon dioxide layer 141, a first silicon layer 142, a second silicon dioxide layer 143, and a second silicon layer 144 on the substrate 11 in sequence using physical vapor deposition or chemical vapor deposition technology, the first The thickness of the silicon dioxide layer 141 is 560nm, the thickness of the first silicon layer 142 is 240nm; the thickness of the second silicon dioxide layer 143 is 560nm, and the thickness of the second silicon layer 144 is 240nm;
[0036] S3: using physical vapor deposition or chemical vapor deposition technology to deposit a layer of silicon dioxide with a thickness of 1900 nm on the surface of the second silicon layer 144 in step S2; ...
Embodiment 3
[0043] Embodiment 3 of the present invention provides a continuous spectrum gas sensor, including the linear variable filter 21 described in Embodiment 1, an infrared detector array 22, a sealing cap 23, a base 24 and pins 25, the sealing cap 23 Be arranged on one side of the base 24, the one side of the base 24 is provided with an infrared detector array 22, and the pin 25 is arranged on the other side of the base 24 and is connected with the infrared detector array 22 after passing through the base 24, The linear variable filter 21 is disposed on the cap 23 and directly above the infrared detector array 22 .
[0044] In summary, the present invention realizes linear variable optical filtering by using a single optical filter, and integrates the linear variable optical filter with an array of infrared detectors to realize the monitoring of mixed gas with a single optical filter and a single NDIR gas sensor, reducing the The size of the mixed gas sensor of NDIR technology; due...
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