Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Method and apparatus for in-situ adjustment of wafer slip detection during workpiece polishing

A slip, wafer technology, used in grinding/polishing equipment, metal processing equipment, control of workpiece feed movement, etc., can solve problems such as negative process effects

Pending Publication Date: 2022-03-18
AXUS TECH
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A substrate that is not firmly held within this interface may slip from its position, which can negatively affect the process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and apparatus for in-situ adjustment of wafer slip detection during workpiece polishing
  • Method and apparatus for in-situ adjustment of wafer slip detection during workpiece polishing
  • Method and apparatus for in-situ adjustment of wafer slip detection during workpiece polishing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] Detailed embodiments of the disclosed technology will now be described with reference to the accompanying drawings.

[0035] Introduction to Chemical Mechanical Polishing (CMP) Systems

[0036] The adoption and use of chemical mechanical polishing (CMP) to planarize thin films in the manufacture of semiconductor ICs, MEMS devices, and LEDs, as well as many other similar applications, is common among all companies manufacturing the "chips" used in these types of devices . This adoption includes making chips for mobile phones, tablets and other portable devices, as well as desktop and laptop computers. Advances in nanotechnology and micromachining hold great promise for the widespread use and adaptation of digital devices in the medical field, the automotive field, and the Internet of Things ("IoT"). Chemical mechanical polishing for thin film planarization was invented and developed in the early 1980s by scientists and engineers at IBM Corporation. Today, this proce...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method and apparatus for in-situ adjustment of wafer slip detection during workpiece polishing is disclosed. In one aspect, a chemical mechanical planarization (CMP) system includes a carrier configured to hold a substrate, a platen supporting a polishing pad, and a slip sensor configured to generate a signal indicative of a surface characteristic of the polishing pad. The system further includes a processor configured to receive the signal from the slip sensor, calibrate a steady-state value of the signal when the CMP system is in a steady-state condition, compare the signal received from the slip sensor to the calibrated steady-state value during CMP polishing, and determine whether the CMP system is in the steady-state condition. And detecting wafer slip in response to a difference between a signal received from the slip sensor and the calibrated steady-state value exceeding a threshold value during CMP polishing.

Description

technical field [0001] The disclosed technology relates to methods and apparatus for improving chemical mechanical planarization (CMP) performance for thin film planarization. Background technique [0002] During chemical mechanical planarization or polishing (CMP), abrasives and acidic or alkaline slurries are applied to a rotating polishing pad / platen by a metering pump or mass flow control regulator system. The substrate or wafer is held by a wafer carrier that is rotated and pressed against a polishing pad on a polishing platen for a specified period of time. The slurry is typically delivered to the polishing platen in a single pass distribution system. During the CMP process, the wafer is polished (ie, planarized) both mechanically (eg, abrasion) and chemically (eg, etch). [0003] During the CMP process, significant forces are generated due to the interaction between the substrate, wafer carrier, polishing pad and polishing platen. A substrate that is not firmly hel...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/005G06T7/00
CPCH01L22/12B24B37/04B24B51/00B24B37/0053B24B49/12B24B49/04H01L21/67219H01L22/20H01L21/67259H01L21/68721H01L21/3212
Inventor D·R·特洛伊
Owner AXUS TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products