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HJT battery and preparation method thereof

A battery and conductive layer technology, applied in the field of solar cells, can solve the problems of poor conductivity and low power collection rate, and achieve the effects of improving conductivity and increasing electron collection rate

Pending Publication Date: 2022-03-25
苏州思尔维纳米科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Compared with PERC solar cells, the biggest structural difference between HJT solar cells is that there is an extra layer of TCO layer (transparent conductive electrode, mainly ITO), but the current TCO layer is in order to better the optical transmittance and conductivity. Optimal optical transmittance, select ITO-based materials with poor conductivity, resulting in low power collection rate

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  • HJT battery and preparation method thereof
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preparation example Construction

[0052] Based on the same inventive concept, the embodiment of the present application also provides a method for preparing the above-mentioned HJT battery, including the following steps:

[0053] S1. Provide an N-type crystalline silicon wafer;

[0054] S2. Prepare intrinsic amorphous silicon layers on the front and back sides of the N-type crystalline silicon wafer;

[0055] S3, preparing a P-type amorphous silicon film layer on the surface of the intrinsic amorphous silicon layer on the front side of the N-type crystalline silicon wafer;

[0056] S4. Prepare an n-type amorphous silicon film layer on the surface of the intrinsic amorphous silicon layer on the back of the N-type crystalline silicon wafer;

[0057] S5. Prepare TCO conductive layers on the surfaces of the p-type amorphous silicon thin film layer and the n-type amorphous silicon thin film layer respectively;

[0058] S6. Prepare silver nanowire layers on the surface of the TCO conductive layer corresponding to ...

Embodiment 1

[0079] The embodiment of the present application provides a HJT battery, including:

[0080] N-type crystalline silicon wafer 1;

[0081] Intrinsic amorphous silicon layer 2, which is respectively located on the front and back of N-type crystalline silicon wafer 1;

[0082] P-type amorphous silicon thin film layer 3, which is located on the surface of intrinsic amorphous silicon layer 2 on the front side of N-type crystalline silicon wafer 1;

[0083] N-type amorphous silicon thin film layer 4, which is located on the surface of intrinsic amorphous silicon layer 2 on the back side of N-type crystalline silicon wafer 1;

[0084] TCO conductive layer 5, which is arranged on the surface of p-type amorphous silicon thin film layer 3 and n-type amorphous silicon thin film layer 4 respectively;

[0085] Silver nanowire layer 6, which is respectively located on the TCO conductive layer 5 corresponding to the p-type amorphous silicon thin film layer 3 and the corresponding TCO condu...

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Abstract

The invention provides an HJT battery and a preparation method thereof. The HJT battery comprises an N-type crystal silicon wafer, an intrinsic amorphous silicon layer, a P-type amorphous silicon thin film layer, an n-type amorphous silicon thin film layer, a TCO conductive layer, a silver nanowire layer and a gate electrode. Compared with a traditional HJT battery, the HJT battery has the advantages that the silver nanowire layer is additionally arranged between the TCO conducting layer and the gate electrode, the conductivity of the TCO conducting layer can be greatly improved by arranging the silver nanowire layer on the TCO conducting layer, the electron collection rate is further improved, the conductivity of the TCO conducting layer can be greatly improved through low-temperature welding of the silver nanowire layer and the TCO conducting layer and low-temperature welding of the silver nanowire layer and the gate electrode, and the conductivity of the TCO conducting layer is improved. The conductivity of the whole path is greatly improved; meanwhile, by adding the silver nanowire layer, the sheet resistance of the TCO conductive layer can be reduced to 30 ohm, and light rays are not influenced (T is greater than 98%), that is, the generation efficiency of photo-induced electrons is almost not influenced.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to an HJT cell and a preparation method thereof. Background technique [0002] Currently widely used PERC and TOPCON technology solar panels, the highest photovoltaic conversion efficiency is only 24%, and the mass production efficiency is 21-22%; the theoretical efficiency of the new generation of HJT (HIT, heterojunction) process solar panels can reach 28- 30%, as a technical direction with a clear application prospect in the photovoltaic industry, the current mass production efficiency is only 24%, which is far from the theoretical efficiency. The main reason is that the collection efficiency of the generated electrons is low, and the loss in the collection and transmission process is relatively large. Compared with PERC solar cells, the biggest structural difference between HJT solar cells is that there is an extra layer of TCO layer (transparent conductive electrode, mainl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/074H01L31/18
CPCH01L31/022425H01L31/074H01L31/1804Y02E10/50
Inventor 孟祥浩
Owner 苏州思尔维纳米科技有限公司
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