Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device

A technology for semiconductors and power transistors, applied in the field of semiconductor devices, which can solve the problems of increasing the number of components and circuit scale, failing to achieve cost reduction, and degrading quality and performance, reducing circuit scale, suppressing propagation delay fluctuations, and improving quality and performance. Effect

Pending Publication Date: 2022-04-01
MITSUBISHI ELECTRIC CORP
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, since a separate drive circuit needs to be prepared, the number of parts and circuit scale increase, and overall cost reduction cannot be achieved
In addition, transmission delay fluctuations occur between two drive circuits with different power supply voltages, resulting in degradation of quality and performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0018] figure 1 It is a circuit diagram showing the semiconductor device according to Embodiment 1. The first power transistor Q1 is a MOSFET, and the second power transistor Q2 is a bipolar transistor such as an IGBT. The gm characteristics and saturation currents of the first and second power transistors Q1 and Q2 are different. The first and second power transistors Q1 and Q2 are connected in parallel to each other.

[0019] The gate driver 1 is an IC that drives the first and second power transistors Q1 and Q2 with separate gate voltages. The external power supplies 2 and 3 are provided outside the gate driver 1, and supply the first and second power supply voltages VCC1 and VCC2 to the gate driver 1, respectively. The second power supply voltage VCC2 is different from the first power supply voltage VCC1.

[0020] The gate driver 1 has a drive circuit 4 , a first amplifier 5 and a second amplifier 6 . The drive circuit 4 receives an input signal Vin, performs processi...

Embodiment approach 2

[0026] image 3 It is a circuit diagram showing a semiconductor device according to Embodiment 2. In the present embodiment, the gate driver 1 further includes a power supply circuit 14 that generates a second power supply voltage VCC2 from the first power supply voltage VCC1 and supplies it to the second amplifier 6 . The second power supply voltage VCC2 is lower than the first power supply voltage VCC1.

[0027] Figure 4 It is a circuit diagram showing a power supply circuit. The power supply circuit 14 is a linear regulator including a transistor 15 , a reference voltage source Vref, feedback resistors R1 and R2 , and an error amplifier 16 . Transistor 15 is a PchMOSFET with source connected to input terminal V IN connection, the drain is connected to the output terminal V OUT connect. Output terminal V OUT The voltage of is divided by resistance through the feedback resistors R1 and R2, and input to the + terminal of the error amplifier 16. A reference voltage of ...

Embodiment approach 3

[0031] Figure 5 It is a circuit diagram showing a semiconductor device according to Embodiment 3. The first and second power transistors Q1', Q2' are connected in parallel to each other, and are connected to the high potential sides of the first and second power transistors Q1, Q2. The structures of the first and second power transistors Q1', Q2' are the same as those of the first and second power transistors Q1, Q2, respectively. The gate driver 1' is an IC that drives the first and second power transistors Q1' and Q2' with separate gate voltages, and has the same structure as the gate driver 1 of the second embodiment. A half-bridge is formed by power transistors Q1, Q2, Q1', Q2' and gate drivers 1, 1'.

[0032] One power supply voltage of the gate driver 1 ′ on the high potential side is supplied from a floating power supply obtained by boosting the power supply voltage VCC1 on the low potential side. Another power supply voltage for the gate driver 1' on the high poten...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor device capable of reducing cost and improving quality and performance is obtained. First and second power transistors (Q1, Q2) having different saturation currents are connected in parallel with each other. A gate driver (1) is an IC that drives first and second power transistors (Q1, Q2) using individual gate voltages, respectively. A gate driver (1) is provided with: a drive circuit (4) for inputting an input signal and outputting a drive signal; a first amplifier (5) that amplifies a drive signal on the basis of a first power supply voltage (VCC1) and supplies the amplified drive signal to the gate of the first power transistor (Q1); and a second amplifier (6) that amplifies the drive signal on the basis of a second power supply voltage (VCC2) different from the first power supply voltage (VCC1) and supplies the drive signal to the gate of the second power transistor (Q2).

Description

technical field [0001] The present invention relates to a semiconductor device that drives power transistors in parallel. Background technique [0002] In semiconductor devices that drive power transistors in parallel, MOSFETs (unipolar) and IGBTs (bipolar) are combined as power transistors for characteristic improvement. If a common gate voltage is used for driving these power transistors, the gate voltage is limited due to the short-circuit tolerance of the IGBT, and thus the characteristic improvement by increasing the gate voltage of the MOSFET is restricted. This hinders the chip size reduction of MOSFETs, making it impossible to achieve cost reduction and miniaturization. Therefore, there has been proposed a semiconductor device in which two power transistors are controlled by separate drive circuits having different power supply voltages (for example, refer to Patent Document 1). [0003] Patent Document 1: Japanese Patent Laid-Open No. 2020-18037 [0004] However,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/567
CPCH03K17/127H02M1/088H02M1/0006H02M1/0045H02M7/5387H02M7/537H03K17/567H02M1/08
Inventor 酒井伸次
Owner MITSUBISHI ELECTRIC CORP