Method for improving durability of memory based on metal tunnel junction
A tunneling junction and memory technology, applied in static memory, read-only memory, information storage, etc., can solve the problems of difficult to achieve, poor durability, etc., and achieve the effects of improved durability, wide application range, and large adjustable parameter range
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[0044] Referring to the accompanying drawings of the present invention, the implementation process of the present invention will be described in detail below.
[0045] (1) Preparation of neck-containing platinum (Pt) nanoribbons: a low-resistance silicon substrate covered with a thermally oxidized silicon dioxide insulating layer is used as a device substrate. The silicon dioxide insulating layer has a thickness of 300nm. After electron beam exposure, the photoresist mask PMMA is patterned, and then electron beam evaporation is used to deposit Pt, which is soaked in acetone and stripped to obtain platinum nanoribbons with a nanometer bandwidth of about 100nm and a thickness of about 10nm ( image 3 a).
[0046] (2) Preparation of a platinum tunneling junction memory device: performing a voltage-current scan (I-V scan) on the platinum nanoribbon device above. The scanning voltage is 0-3V, the scanning speed is 0.3V / s, and a current of about 3mA can be generated in the platinu...
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