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Bottom anti-reflection layer and preparation method thereof

A bottom anti-reflection layer and anti-reflection technology, applied in the field of photoresist, can solve difficult problems and achieve the effects of eliminating standing waves, improving anti-reflection ability, and reducing reflection

Pending Publication Date: 2022-04-08
NINGBO NATA OPTO ELECTRONICS MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Embodiments of the present invention provide a bottom anti-reflection coating and a preparation method thereof, aiming to solve the technical problem that it is difficult to control the n / K value of the bottom anti-reflection coating in the prior art

Method used

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  • Bottom anti-reflection layer and preparation method thereof
  • Bottom anti-reflection layer and preparation method thereof
  • Bottom anti-reflection layer and preparation method thereof

Examples

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preparation example Construction

[0031] In one embodiment, the preparation method of the bottom anti-reflection layer specifically includes the following steps:

[0032] Spin-coat the first light-absorbing film solution on a silicon wafer, spin at a speed of 2000-3000 r / min to form a film, and bake it on a hot plate at 150-250°C for 80-100s at the same time, and obtain the the first light absorbing film layer;

[0033] Spin-coat anti-reflection film solution on the first light-absorbing film layer, spin at a speed of 500-3000 r / min to form a film, and post-bake on a hot plate at 60-300°C for 90-300 s, and after cooling, the obtained the anti-reflection film layer;

[0034] Spin-coat the second light-absorbing film solution on the anti-reflection film layer, spin at a speed of 2000-3000 r / min to form a film, and bake it on a hot plate at 150-250°C for 80-100s at the same time. After cooling, the obtained solution is obtained. the second light absorbing film layer.

[0035] In one embodiment, the bottom anti...

Embodiment 1

[0051] A preparation method of a bottom anti-reflection layer, comprising the following steps:

[0052] Spin-coating the first light-absorbing film solution on a silicon wafer, and rotating at a speed of 2500 rpm to form a film, while baking on a hot plate at 200°C for 90s, and cooling to obtain the first light-absorbing film layer;

[0053] Spin-coating the anti-reflection film solution on the first light-absorbing film layer, and rotating at a speed of 2000 rpm to form a film, while post-baking on a 200°C hot plate for 200s, and cooling to obtain the anti-reflection film layer;

[0054] Spin-coat the second light-absorbing film solution on the anti-reflection film layer, spin at a speed of 2500 rpm to form a film, and bake it on a hot plate at 200°C for 90s at the same time, and obtain the second light-absorbing film layer after cooling .

[0055] The bottom anti-reflection layer prepared above had a refractive index of 1.81 and an extinction coefficient of 0.38.

[0056] ...

Embodiment 2

[0066] A preparation method of a bottom anti-reflection layer, comprising the following steps:

[0067] Spin-coating the first light-absorbing film solution on a silicon wafer, and rotating at a speed of 2000 rpm to form a film, while baking on a hot plate at 150° C. for 80s, and cooling to obtain the first light-absorbing film layer;

[0068] Spin-coat anti-reflection film solution on the first light-absorbing film layer, and rotate at a speed of 500 rpm to form a film, and at the same time post-bake on a 60°C hot plate for 90s, and obtain the anti-reflection film layer after cooling;

[0069] Spin-coat the second light-absorbing film solution on the anti-reflection film layer, spin at a speed of 2000 rpm to form a film, and bake it on a hot plate at 150°C for 80s at the same time, and obtain the second light-absorbing film layer after cooling .

[0070] The bottom anti-reflection layer prepared above had a refractive index of 1.85 and an extinction coefficient of 0.32.

[...

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Abstract

The invention is applicable to the technical field of photoresist, and provides a bottom anti-reflection layer and a preparation method thereof, and the method comprises the following steps: spin-coating a first light absorption film solution on a silicon wafer to form a first light absorption film layer of the bottom anti-reflection layer; spin-coating an anti-reflection film solution on the first light absorption film layer to form an anti-reflection film layer of a bottom anti-reflection layer; and spin-coating a second light absorption film solution on the anti-reflection film layer to form a second light absorption film layer of a bottom anti-reflection layer. According to the method, the anti-reflection film layer is additionally arranged between the first light absorption film layer and the second light absorption film layer, so that the anti-reflection capability of a photoresist bottom interface is further improved, the bottom anti-reflection layer can better absorb redundant exposure light rays reaching the bottom of the photoresist film, reflection is avoided or reduced, and the yield of the photoresist film is improved. Therefore, the purposes of eliminating standing waves and improving the line morphology are achieved.

Description

technical field [0001] The invention belongs to the technical field of photoresist, and in particular relates to a bottom anti-reflection layer and a preparation method thereof. Background technique [0002] With the rapid development of semiconductor technology, the line width achieved by the photolithography process is getting smaller and smaller, so that after the photoresist is directly coated on the silicon wafer, the light is reflected at the bottom interface of the photoresist under the irradiation of ultraviolet light, which in turn causes The problem of overexposure of photoresist is solved. [0003] At present, a bottom anti-reflection coating (BARC) is usually added between the Si substrate and the photoresist in advance to absorb the excess exposure light reaching the bottom of the photoresist film and avoid or reduce its reflection. To achieve the purpose of eliminating standing waves and improving line appearance. However, the existing bottom anti-reflection ...

Claims

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Application Information

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IPC IPC(8): G03F7/09
Inventor 顾大公陈鹏夏力马潇毛智彪许从应
Owner NINGBO NATA OPTO ELECTRONICS MATERIAL CO LTD
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