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Process for manufacturing silicon carbide semiconductor device having improved characteristics

A technology of silicon carbide and semiconductor, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as impossible to prevent transmission

Pending Publication Date: 2022-04-08
STMICROELECTRONICS SRL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since TSD is a defect of crystalline nature, it is impossible to prevent its propagation towards the epitaxial layer

Method used

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  • Process for manufacturing silicon carbide semiconductor device having improved characteristics
  • Process for manufacturing silicon carbide semiconductor device having improved characteristics
  • Process for manufacturing silicon carbide semiconductor device having improved characteristics

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Experimental program
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Embodiment Construction

[0027] As will be discussed in detail below, instead of following known solutions that act to stop or reduce the propagation of defects (in particular, TSDs), one aspect of the present solution envisages: intervening to reduce The resulting topographical damage, in particular, reduces the pits (nano-pits) generated on the surface of the epitaxial layer.

[0028] The proposed solution allows improving the subsequent processing operations envisioned by the fabrication process on the epitaxial layer, such as the oxidation step for growing the dielectric layer on the epitaxial layer, preventing the influence of electric field build-up and ensuring homogeneous oxidation.

[0029] According to one aspect of the present solution, an additional CMP step is introduced into the manufacturing process, ie a step of chemical mechanical polishing of the surface of the epitaxial layer formed on the silicon carbide substrate. With associated surface processing, which is a combination of chemi...

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Abstract

The present disclosure relates to a process for manufacturing a silicon carbide semiconductor device having improved characteristics. A process for manufacturing a silicon carbide semiconductor device includes providing a silicon carbide wafer having a substrate. An epitaxial growth for forming an epitaxial layer is performed on a substrate, the epitaxial layer having a top surface. Following the step of performing the epitaxial growth, the process includes the step of removing a surface portion of the epitaxial layer starting from the top surface, thereby removing surface damage present at the top surface due to propagation of dislocations from the substrate during the previous epitaxial growth, and thereby defining a resulting top surface that is substantially free of defects.

Description

technical field [0001] The present disclosure relates to processes for fabricating silicon carbide semiconductor devices with improved characteristics. Background technique [0002] Electronic semiconductor devices fabricated starting from silicon carbide substrates are known, such as diodes or MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), in particular for electronic power applications. [0003] Due to the good chemical-physical properties of silicon carbide, the aforementioned devices have proven to be advantageous. For example, silicon carbide generally has a wider bandgap than silicon, which is commonly used in electronic power devices. Thus, also having a relatively small thickness, silicon carbide has a higher breakdown voltage than silicon and can therefore be advantageously used in high voltage, high power and high temperature applications. [0004] However, the fabrication of silicon carbide semiconductor devices is affected by several problems. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/306H01L21/02
CPCH01L21/30625H01L21/02057H01L21/02236H01L21/02378H01L21/02529H01L21/0262H01L29/1608
Inventor N·皮卢索A·塞维利诺S·里纳尔迪A·马泽奥L·卡多A·鲁索G·弗兰科A·巴西
Owner STMICROELECTRONICS SRL