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Low-cost preparation method and structure of photoelectric sensor

A photoelectric sensor, low-cost technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problem of high cost of photoelectric sensors, and achieve the effects of reducing manufacturing costs, reducing dark current, and increasing production capacity

Pending Publication Date: 2022-04-08
WUXI ZHONGWEI JINGYUAN ELECTRONIC CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a low-cost preparation method of a photoelectric sensor and its structure, to solve the problem of high cost of preparing photoelectric sensors at present

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  • Low-cost preparation method and structure of photoelectric sensor
  • Low-cost preparation method and structure of photoelectric sensor
  • Low-cost preparation method and structure of photoelectric sensor

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Embodiment Construction

[0030] The low-cost preparation method and structure of a photoelectric sensor proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0031] The invention provides a low-cost preparation method of a photoelectric sensor. A low-doped layer of the same doping type as the substrate is formed on the surface of a silicon wafer by using a general injection scheme, which replaces the original cut-off ring and reduces the dark area of ​​the device. The effect of current. At the same time, the implant dose and energy of general injection have a great influence on the per...

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Abstract

The invention discloses a low-cost preparation method of a photoelectric sensor, and belongs to the technical field of semiconductors. According to the invention, a low-doping layer with the same doping type as the substrate is formed on the surface of the silicon wafer by adopting a general injection scheme to replace an original cut-off ring, so that the dark current of the device is reduced. Meanwhile, the injection dose and energy of general injection have great influence on the performance of the photoelectric device, especially on the breakdown voltage. The silicon oxide dielectric layer is prepared on the photosensitive surface by adopting an oxidation scheme, the original scheme of re-depositing the photosensitive dielectric layer after photoetching is replaced, five times of photoetching of the photoelectric sensor is finally reduced to only three times of photoetching, and the manufacturing cost of the photoelectric sensor is finally greatly reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor technology, in particular to a low-cost preparation method of a photoelectric sensor and its structure. Background technique [0002] A photoelectric sensor is a semiconductor device that converts light energy into electrical energy. It is widely used in various industries such as industrial sensing, smart home appliances, and industrial control, such as remote controls, optical switches, encoders, and photocells. Due to the wide range of uses of photoelectric sensors, there is a very high demand for low-cost photosensor chips in the market. [0003] Conventional photoelectric sensors need to have five different functional areas: cut-off ring, PN junction, photosensitive surface, contact hole and electrode. Therefore, conventional photoelectric sensor chips need to be prepared by five photolithography operations. After each photolithography, corrosion And injection is also required, so the ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/0216H01L31/18
CPCY02P70/50H01L31/0352H01L31/18H01L31/0216
Inventor 陈慧蓉陈全胜张明彭时秋王涛贺琪
Owner WUXI ZHONGWEI JINGYUAN ELECTRONIC CO LTD