Method for characterizing microstructure evolution of bonding area of IGBT (Insulated Gate Bipolar Translator) chip

A technology of microstructure evolution and chip bonding, which is used in instruments, measuring devices, scientific instruments, etc. to improve efficiency, reduce roughness, and avoid signal drift.
CN114371184AActive Publication Date: 2022-04-19BEIJING UNIV OF TECH
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
BEIJING UNIV OF TECH
Publication Date
2022-04-19

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Abstract

The invention discloses an IGBT chip bonding area microstructure evolution characterization method. The method comprises the following steps: S1, obtaining a sample: preprocessing an IGBT module to obtain the sample; s2, preparing a sample to be etched: mounting the sample on an automatic grinding and polishing clamp, and then grinding the sample to obtain the sample to be etched; and S3, obtaining an etched sample to be characterized: determining a target area of the etched sample to be characterized. According to the invention, the method of etching the bonding area by using the focused ion beam is adopted for sample preparation, so that the EBSD acquisition efficiency is improved, the EBSD image without drift stretching is obtained, and the microstructure of the bonding area is effectively represented; meanwhile, the problems of signal drifting, image distortion and the like caused by the fact that epoxy resin is not conductive and exposed metal parts in devices are reduced in a traditional sample preparation method are solved. In addition, the automatic grinding and polishing clamp is arranged to fix the sample, and the surface flatness and the surface neatness effect of the ground and polished sample are improved.
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Description

technical field

[0001] The invention relates to the technical field of material microstructure characterization, in particular to a method for characterization of microstructure evolution in an IGBT chip bonding region. Background technique

[0002] With the development of the power electronics industry, IGBT modules, as the core power devices for power control and conversion, have been widely used in various occasions. However, during the service process, the IGBT chip is often subjected to repeated impacts of thermal stress, especially the bonding area between the bonding wire and the Al metallization layer, which will undergo microstructural evolution, resulting in degradation of its electrical properties, and eventually leading to failure of the IGBT module. . Therefore, in order to better improve the service reliability of the IGBT module, it is particularly important to study the evolution of the microstructure of the IGBT chip bonding area.

[0003] The existing sam...

Claims

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