Low-dielectric low-loss Ba-Si-B-M-based LTCC material and preparation method thereof

A ba-si-b-m, low-loss technology, applied in the field of electronic information ceramics and its manufacturing, achieves the effects of low dielectric loss, simple preparation process and excellent mechanical properties

Active Publication Date: 2022-04-29
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, so far, researchers have rarely reported on the low-temperature sintering modification and LTCC application of Ba-Si

Method used

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  • Low-dielectric low-loss Ba-Si-B-M-based LTCC material and preparation method thereof
  • Low-dielectric low-loss Ba-Si-B-M-based LTCC material and preparation method thereof
  • Low-dielectric low-loss Ba-Si-B-M-based LTCC material and preparation method thereof

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Embodiment Construction

[0017] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0018] According to the general chemical formula BaSi in the embodiment 2 B x m y o 5 (Wherein M is Li, Ca and / or Zn of metal cation, x=0.05~0.2mol, y=0.05~0.09mol) carry out batching, raw material is BaCO 3 , SiO 2 , Li 2 CO 3 , CaCO 3 , CuO, ZnO and H 3 BO 3 . The material of the present invention is prepared by solid-state reaction, and the specific preparation steps are consistent with the steps of the above-mentioned content of the invention.

[0019]

[0020] Microwave dielectric properties of samples 1-7 at the optimum sintering temperature:

[0021]

[0022] figure 1 Be the XRD diffraction pattern of embodiment 2,3 sample ceramic material, from figure 1 It can be seen that the main crystal phase is BaSi 2 o 5 (PDF#26-0176), no secondary phase, ensuring excellent dielectric and mechanical properties of the ceramic m...

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Abstract

The invention belongs to the field of electronic information ceramics and manufacturing thereof, and particularly relates to a low-dielectric low-loss Ba-Si-B-M-based LTCC (Low Temperature Co-Fired Ceramic) material and a preparation method thereof. The compact Ba-Si-B-M-based microwave ceramic material is sintered and molded at the low temperature of 850-950 DEG C by adjusting the formula of the Ba-Si-based ceramic raw materials and adopting a solid phase method by fully utilizing the characteristic that the lattice energy of Si-O bonds is high due to the fact that Si < 4 + > ions are low in polarizability and the covalent bonding property of the Si-O bonds in the complex chemical bond theory. A eutectic compound is formed in the sintering process, so that grain rearrangement is promoted, and BaSi2O5 phase ceramic is separated out along with sintering; the low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low-dielectric-constant low

Description

technical field [0001] The invention belongs to the field of electronic information ceramics and its manufacture, and relates to a Ba-Si-B-M-based microwave dielectric LTCC material with low dielectric constant and low dielectric loss and a preparation method thereof. Background technique [0002] With the rapid development of 5G communication technology, the Internet of Things and global satellite communication systems, human beings have entered the era of high-speed information. The capacity of communication information is increasing exponentially, and wireless communication is gradually developing towards higher microwave frequency bands. Communication technology needs to meet the communication needs of emerging industries such as large data throughput and high-speed transmission capabilities. Therefore, microwave dielectric ceramics with low-temperature sintering, low dielectric constant, and low dielectric loss that can be used for 5G development are necessary basic ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/16C04B35/622C04B35/64
CPCC04B35/16C04B35/622C04B35/64C04B2235/3215C04B2235/3409C04B2235/3418C04B2235/3281C04B2235/3203C04B2235/3208C04B2235/3284C04B2235/6583C04B2235/656C04B2235/6567C04B2235/96
Inventor 李恩竹吴裴杨鸿程钟朝位张树人孙成礼
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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