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Method for removing photoresist layer and method for manufacturing semiconductor device

A technology for photoresist layer removal and manufacturing methods, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problem of increased feature size of implanted regions, serious cross-diffusion, and impact on static random access memory Electrical performance and other issues, to achieve the effect of improving electrical performance, simple operation, and eliminating photoresist residue

Active Publication Date: 2022-06-07
NEXCHIP SEMICON CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the feature size in the photoresist layer is directly adjusted, or the exposure conditions are adjusted, the feature size of the implanted area will increase unpredictably, making the cross-diffusion of the adjacent areas of NMOS and PMOS more serious, thus affecting the static random memory. Take the electrical performance of the memory

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  • Method for removing photoresist layer and method for manufacturing semiconductor device
  • Method for removing photoresist layer and method for manufacturing semiconductor device
  • Method for removing photoresist layer and method for manufacturing semiconductor device

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Embodiment Construction

[0050] The embodiments of the present invention are described below through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0051] It should be noted that the diagrams provided in this embodiment are only to illustrate the basic concept of the present invention in a schematic way, so the diagrams only show the components related to the present invention rather than the number, shape and the number of components in actual implementation. For dimension drawing, the type, quantity and proportion of each component can be changed at will in actual implementation, and t...

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Abstract

The invention provides a method for removing a photoresist layer and a method for manufacturing a semiconductor device. The method for removing a photoresist layer includes the following steps: providing a semiconductor layer; forming an anti-reflection layer on the semiconductor layer; forming a photoresist layer on the anti-reflection layer; etching the photoresist layer and the anti-reflection layer to form a patterned photoresist layer and the anti-reflection layer; using the photoresist layer and the anti-reflection layer as mask, implanting ions into the semiconductor layer; and removing the photoresist layer and the anti-reflection layer. The photoresist residue problem can be solved by the method for removing the photoresist layer and the manufacturing method of the semiconductor device provided by the present invention.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, and in particular, to a method for removing a photoresist layer and a method for fabricating a semiconductor device. Background technique [0002] Static Random-Access Memory (SRAM) is an integrated semiconductor device. In the production process of SRAM, after N-type ion and P-type ion implantation or after etching, when the photoresist needs to be removed, At the bottom of the photoresist, there will be photoresist residue due to the corner structure. Residual photoresist can affect the active area, thereby affecting the effect of ion implantation. And after N-type ions and P-type ions are implanted, there will be cross-diffusion in the adjacent regions of NMOS and PMOS. If the feature size in the photoresist layer is directly adjusted, or the exposure conditions are adjusted, the feature size of the implanted area will increase unpredictably, which will make the cross-diffusio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/027H01L21/266H01L21/8244H01L27/11
CPCH01L21/0272H01L21/266H10B10/00
Inventor 宋富冉周儒领黄厚恒
Owner NEXCHIP SEMICON CO LTD
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