Preparation method of passivated contact cell and passivated contact cell

Abstract

The invention provides a preparation method of a passivation contact cell and the passivation contact cell, and relates to the technical field of solar photovoltaics. Wherein in the process of preparing the passivation contact cell, boron diffusion is performed on the front surface of a silicon wafer to form a P-type doped layer, and a borosilicate glass layer covering the front surface of the silicon wafer is formed, so that an effective mask protection effect can be achieved in the subsequent process, and the front surface structure is prevented from being damaged; the polycrystalline silicon carbide layer is adopted on the back face of the silicon wafer to achieve the field passivation effect, loss of light parasitic absorption is avoided, phosphorus diffusion preparation is carried out after deposition of the N-type polycrystalline silicon carbide layer, deposition of the polycrystalline silicon carbide layer is more controllable, it can be guaranteed that the film layer is uniform and not prone to falling off or blistering, high-temperature crystallization is not needed after diffusion, and the process efficiency and the passivation effect are guaranteed.

Description

technical field [0001] The invention relates to the field of solar photovoltaic technology, in particular to a preparation method of a passivated contact cell and the passivated contact cell. Background technique [0002] The passivated contact battery can effectively reduce the recombination loss and improve the battery conversion efficiency by realizing the passivation of the back side. [0003] However, in the passivation contact cell, a poly-Si (polysilicon) layer is often prepared on the silicon oxide layer on the back side and then doped with phosphorus as a field passivation selective contact material. When the poly-Si layer is thicker, it will cause more Optical parasitic absorption affects the short-circuit current, and it is easy to be burned through when it is thin, which affects the metallization contact of the battery, and the poly-Si layer is easy to fall off and foam during the long-term formation process, resulting in low process efficiency and poor passivati...

AI Technical Summary

Problems solved by technology

[0003] However, in the passivation contact cell, a poly-Si (polysilicon) layer is often prepared on the silicon oxide layer on the back side and then doped with phosphorus as a field passivation selective contact material. When the poly-Si layer is thicker, it will cause more Optical parasitic absorption affects the short-circuit current, and it is easy to be burned through when it is thin, which affects the metallization contact of the battery, and the poly-Si layer is easy to fall off and foam during the long-term generation process, resulting in low process efficiency and poor passivation effect

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