Vertical spin-transfer torque magnetic random access memory and preparation method thereof
A spin transfer torque and random access memory technology, which is applied in the fields of magnetic field controlled resistors, the manufacture/processing of electromagnetic devices, semiconductor devices, etc. memory application and other issues, to achieve the effect of increasing storage density, reducing floor space, and improving accuracy
Pending Publication Date: 2022-05-03
GTA SEMICON CO LTD
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Problems solved by technology
[0006] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a vertical spin transfer torque magnetic random access memory and its preparation method, which is used to solve the problem that the vertical spin transfer torque magnetic random access memory occupies a large area in the prior art. , The low storage density is not conducive to the application of spin transfer torque magnetic random access memory
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preparation example Construction
[0082] refer to figure 1 , the present embodiment also provides a method for preparing a vertical spin transfer torque magnetic random access memory, comprising the following steps:
[0083] S1: provide the substrate;
[0084] S2: forming a fixed ferromagnetic layer composite structure on the substrate, the fixed ferromagnetic layer composite structure includes alternately arranged insulating layers and fixed ferromagnetic layers, wherein the fixed ferromagnetic layer includes N layers, N ≥2;
[0085] S3: forming a groove in the composite structure of the fixed ferromagnetic layer, and the groove penetrates through the fixed ferromagnetic layer;
[0086] S4: forming an insulating tunneling barrier layer in the trench, and the insulating tunneling barrier layer covers the trench;
[0087] S5: forming a free ferromagnetic layer in the trench, and the free ferromagnetic layer covers the insulating tunneling barrier layer;
[0088] S6: forming an intermediate metal connection ...
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Abstract
The invention provides a vertical spin-transfer torque magnetic random access memory and a preparation method thereof. The vertical spin-transfer torque magnetic random access memory comprises a substrate, a fixed ferromagnetic layer composite structure, a groove, an insulating tunneling barrier layer, a free ferromagnetic layer, a middle metal connecting structure and a peripheral metal connecting structure, the fixed ferromagnetic layer composite structure is located on the substrate and comprises insulating layers and fixed ferromagnetic layers which are alternately arranged; the groove penetrates through the fixed ferromagnetic layer; the insulating tunneling barrier layer and the free ferromagnetic layer are sequentially located in the groove; the middle metal connecting structure is located in the groove and covers the free ferromagnetic layer; and the peripheral metal connecting structure is positioned in the fixed ferromagnetic layer composite structure, is in contact with the fixed ferromagnetic layer and is correspondingly arranged. The vertical spin transfer torque magnetic random access memory is formed by stacking and combining STT-MRAMs in the vertical direction, under the same occupied area, double or more times of information can be stored, the storage density of the memory device can be improved, and the reading and writing accuracy of each layer of memory can be improved.
Description
technical field [0001] The invention belongs to the technical field of semiconductors, and relates to a vertical spin transfer torque magnetic random access memory and a preparation method thereof. Background technique [0002] Magnetoresistive Random Access Memory (MRAM) is a random memory device that works by using its resistance value instead of charge to store data. Its core includes a magnetic tunnel junction (MTJ) structure, which can represent the "0" or "1" state of the storage structure by controlling the resistance of the MTJ. [0003] The MTJ structure usually includes a fixed ferromagnetic layer and a free ferromagnetic layer, which are separated by an insulating tunneling barrier layer between the fixed ferromagnetic layer and the free ferromagnetic layer, sandwiched by top and bottom electrodes. The MTJ structure allows current to flow between the top electrode and the bottom electrode. [0004] Spin-transfer torque magnetic random access memory (STT-MRAM) is...
Claims
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Patent Timeline
Login to View More IPC IPC(8): H01L27/22H01L43/08H01L43/10H01L43/12
CPCH10B61/20H10N50/85H10N50/10H10N50/01
Inventor 刘金营
Owner GTA SEMICON CO LTD