Double-cavity ceramic packaging shell and preparation method thereof
A ceramic packaging and cavity technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as inability to adapt to high-frequency transmission requirements, device high-frequency signal transmission obstacles, and limited signal transmission capabilities. , to achieve the effect of improving transmission capacity, reducing size, reducing reflection and loss
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Embodiment 1
[0044] Such as Figure 1-5 As shown, a dual-cavity ceramic package housing includes a rectangular bottom plate 10 and a rectangular ring frame 20 connected to the bottom plate 10 . The bottom plate 10 is made of an aluminum nitride ceramic bottom plate. A partition wall 21 is arranged inside the ring frame 20 to form a double cavity structure. The partition wall 21 is arranged parallel to the short sides of the ring frame 20 . The thickness of the partition wall 21 is the same as that of the main body of the ring frame 20, and the connection between the partition wall 21 and the ring frame 20 is connected with rounded corners to increase the mechanical strength of the package and prevent deformation.
[0045] The upper surface and the lower surface of the bottom plate 10 are all provided with a metallized layer 11, the thickness of the metallized layer 11 is about 50 μm, and the material of the metallized layer is Cu; A Ni layer in contact with layer 11 and an Au layer in con...
Embodiment 2
[0063] On the basis of the structure of Embodiment 1, a double-cavity ceramic packaging casing includes an aluminum nitride ceramic base plate 10 and a Kovar metal ring frame 20 . The aluminum nitride ceramic base plate 10 is 16.0mm long, 11.0mm wide, and 0.60mm thick; the middle part of the ring frame 20 is provided with a partition wall, and the thickness of the partition wall is 0.55mm consistent with that of the ring frame, and the connection between the partition wall and the ring frame wall is made of R0.30 round corner transition.
[0064] The aluminum nitride ceramic base plate 10 adopts DPC or other coating process to prepare the metallization layer 11, the metallization layer is a Cu layer with a thickness of 50 μm; the surface coating layer 111 is a nickel-gold layer with a total thickness of 60-70 μm; 12 The thickness is 30 μm.
[0065] At the joint between the bottom plate 10 and the ring frame 20, the non-metallized solder resist 13 arranged around the bottom pl...
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Abstract
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