High-gain intermediate-frequency amplifier with body leakage cross coupling technology
A cross-coupling, high-gain technology, applied in the field of high-gain intermediate-frequency amplifiers, can solve problems such as increasing the high-frequency gain of intermediate-frequency amplifiers, and achieve the effects of increasing voltage gain, reducing the problem of gain reduction with frequency, and improving high-frequency gain.
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[0032] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.
[0033] This embodiment proposes a high-gain IF amplifier with body-drain cross-coupling technology, which introduces body-drain cross-coupling capacitors on the basis of traditional common-source amplifiers, and connects the drains of MOS transistors on one side of the differential pair to the other through capacitors. The body electrode on one side, and at the same time provide a static bias for the body electrode through a resistor.
[0034] In this embodiment, NMOS is used as an input differential pair as an example, and its circuit schematic diagram is as follows image 3 shown; specifically include: MOS transistors M1 and M2, loads Load1 and Load2, load capacitance C L1 with C L2 , and coupling capacitors C1 and C2, bias resistors R1 and R2, where the gate of the MOS transistor M1 is connected to the positive input signal V in+ , the sou...
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