Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Wafer grinding head and wafer adsorption method

A grinding head and wafer technology, which is applied in the directions of grinding machine tools, grinding tools, grinding devices, etc., can solve the problems of further improving the grinding quality of wafers and increasing the manufacturing cost of grinding heads without explanation.

Pending Publication Date: 2022-05-20
上海江丰平芯电子科技有限公司
View PDF22 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The grinding head is mainly equipped with a wafer detection device, which increases the manufacturing cost of the grinding head, and does not illustrate further improvement of the grinding quality of the wafer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wafer grinding head and wafer adsorption method
  • Wafer grinding head and wafer adsorption method
  • Wafer grinding head and wafer adsorption method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0064] This embodiment provides a wafer grinding head, the front top view of the wafer grinding head is as follows figure 1 As shown, the top view of the bottom surface is shown as image 3 As shown, the side sectional view is shown as figure 2 shown.

[0065] The wafer grinding head provided by this embodiment includes a grinding head body and a fixing device surrounding the periphery of the grinding head body; the fixing device includes a closely arranged first ring and a second ring; the grinding head body, the first The ring remains concentric with the second ring; the grinding head body is provided with a first air path 1 and a second air path 2; the first ring is evenly provided with a ventilation groove 3; the ventilation groove 3 communicates with the second gas path 2.

[0066] The shape of the grinding head body includes a cylinder; the diameter of the grinding head body is 76.2 mm; the height of the grinding head body is 67.85 mm.

[0067] The first gas path 1 ...

Embodiment 2

[0073] This embodiment provides a wafer grinding head, the difference between the wafer grinding head and Embodiment 1 is that the ring groove is omitted in this embodiment.

Embodiment 3

[0075] This embodiment provides a wafer grinding head, the difference between the wafer grinding head and Embodiment 1 is that this embodiment is provided with three ventilation grooves.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
heightaaaaaaaaaa
depthaaaaaaaaaa
Login to View More

Abstract

The invention provides a wafer grinding head and a wafer adsorption method. The wafer grinding head comprises a grinding head body and a fixing device surrounding the periphery of the grinding head body. The fixing device comprises a first circular ring and a second circular ring which are tightly arranged; the grinding head body, the first circular ring and the second circular ring are kept concentric; a first gas path and a second gas path are arranged on the grinding head body; ventilation grooves are uniformly formed in the first circular ring; and the ventilation groove is communicated with the second gas path. The wafer grinding head provided by the invention is simple in structure, convenient to process and beneficial to industrial production; by means of distribution of internal air paths, the pressure, acting on the surface of the wafer, of an adsorption film at the bottom of the 300 mm Head can be accurately controlled through a machine table, and the effects of loading and unloading the wafer and grinding the wafer are achieved.

Description

technical field [0001] The invention belongs to the field of chemical mechanical grinding, and relates to a wafer grinding head, in particular to a wafer grinding head and a wafer adsorption method. Background technique [0002] Wafer is the carrier used in the production of integrated circuits, mostly referring to single crystal silicon wafers. [0003] Single crystal silicon wafers are drawn and refined from ordinary silica sand, and are made into single crystal silicon rods through a series of measures of dissolution, purification and distillation. After the single crystal silicon rods are polished and sliced, they become wafers. Wafer is the most commonly used semiconductor material. According to its diameter, it is divided into 4 inches, 5 inches, 6 inches, 8 inches and other specifications. Recently, 12 inches or even larger specifications (14 inches, 15 inches, 16 inches, ... 20 inches and above, etc.). The larger the wafer, the more ICs can be produced on the same ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/11B24B37/34
CPCB24B37/11B24B37/34B24B37/345
Inventor 姚力军潘杰惠宏业王学泽范兴泼
Owner 上海江丰平芯电子科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com