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Low-temperature thermoelectric device and preparation method thereof

A technology of thermoelectric devices and thermoelectric elements, applied in the manufacture/processing of thermoelectric devices, parts of thermoelectric devices, thermoelectric devices using only Peltier or Seebeck effect, etc., can solve the problems of poor thermoelectric properties of p-type bismuth-antimony alloys, and achieve Compact structure, high cooling temperature difference, easy welding effect

Pending Publication Date: 2022-05-27
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the thermoelectric properties of p-type bismuth-antimony alloy paired with n-type bismuth-antimony alloy are poor, and there are no low-temperature thermoelectric devices based on bismuth-antimony thermoelectric materials on the market

Method used

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  • Low-temperature thermoelectric device and preparation method thereof
  • Low-temperature thermoelectric device and preparation method thereof
  • Low-temperature thermoelectric device and preparation method thereof

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preparation example Construction

[0039] see figure 2 , the present invention also provides a preparation method of a low-temperature thermoelectric device, comprising the following steps:

[0040] Step S110: Provide N-type thermoelectric elements and P-type thermoelectric elements.

[0041] In some embodiments, the N-type thermoelectric element is a low-temperature thermoelectric material BiSb, and the P-type thermoelectric element is Tl 2 Ba 2 Ca 2 Cu 3 O 10 superconducting material.

[0042] In some of these embodiments, the size of the N-type thermoelectric element is 1.2×1×5mm 3 or 2.4×2×7mm 3 , the size of the P-type thermoelectric element is 1.2×0.5×5mm 3 or 2.4×1×7mm 3 .

[0043] Step S120: Welding the two ends of the N-type thermoelectric element and the P-type thermoelectric element on the guide plate respectively.

[0044]It can be understood that in this embodiment, a thermoelectric element is composed of an n-type thermoelectric element and a p-type thermoelectric element, and the two ...

Embodiment 1

[0055] In this embodiment 1, a method for manufacturing a low-temperature thermoelectric device specifically includes the following steps:

[0056] Clean the copper deflector and the insulating and thermally conductive ceramic substrate, and weld them together with a copper electrode. The n-type BiSb thermoelectric material was cut to a size of 1.2 × 1 × 5 mm 3 The n-type thermoelectric element, the Tl 2 Ba 2 Ca 2 Cu 3 O 10 The superconducting material is cut to size 1.2×0.5×5mm 3 p-type thermoelectric element. The thermoelectric element is composed of an n-type thermoelectric element and a p-type thermoelectric element, the two ends are respectively welded on the copper guide plate with copper electrodes, and the power line is welded on the copper guide plate. Connect the power cord to the power supply and input current into the loop through the power supply. When the temperature of the hot end of the low temperature thermoelectric device is 90K and the input current ...

Embodiment 2

[0058] In order to better connect the ceramic substrate and the copper guide plate together, the surface of the insulating ceramic substrate is plated with copper. Weld the copper deflector and the copper-clad ceramic substrate together with a copper electrode. The n-type BiSb thermoelectric material was cut to a size of 1.2 × 1 × 5 mm 3 The n-type thermoelectric element, the Tl 2 Ba 2 Ca 2 Cu 3 O 10 The superconducting material is cut into a section size of 1.2×0.5×5mm 3 p-type thermoelectric element. In order to better connect the thermoelectric element with the copper guide fin, copper is plated on both ends of the n-type thermoelectric element and the p-type thermoelectric element, and the copper-plated thermoelectric element and the copper guide fin are welded together with copper electrodes, which greatly increases the Reduced interface resistance and improved welding performance. Solder the power wire on the copper guide plate, and the low temperature thermoelec...

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Abstract

The low-temperature thermoelectric device provided by the invention comprises an N-type thermoelectric element, a P-type thermoelectric element, a flow deflector opposite to the N-type thermoelectric element and the P-type thermoelectric element, a heat conduction substrate arranged on the flow deflector and a power supply electrically connected with the flow deflector. According to the low-temperature thermoelectric device provided by the invention, the flow deflector is plated on the surface of the heat-conducting substrate, so that the heat-conducting substrate can be welded with the thermoelectric element more easily, the contact resistance and thermal resistance among the thermoelectric element, the flow deflector and the ceramic substrate are reduced, and the refrigeration temperature difference of the thermoelectric device is improved by more than 10%. The thermoelectric device is suitable for low-temperature thermoelectric devices in low-temperature areas below the room temperature, and meets the requirements of cold energy power generation or low-temperature refrigeration. In addition, the invention also provides a preparation method of the low-temperature thermoelectric device.

Description

technical field [0001] The invention relates to the technical field of thermoelectric materials and devices, in particular to a low-temperature thermoelectric device and a preparation method thereof. Background technique [0002] The working principle of thermoelectric devices is based on the Seebeck effect (Seebeck) or Peltier effect (Peltier) to achieve direct conversion between thermal energy and electrical energy, thermoelectric devices have compact structure, reliable performance, no noise, no wear, no leakage during operation , good mobility and so on. Low temperature thermoelectric devices are used in cold energy power generation, such as liquefied natural gas (LNG), liquid nitrogen (LN) and other cold energy utilization, and low temperature refrigeration, such as micro-area cooling, optical communication diodes, charge-coupled device (CCD) temperature regulation systems, etc. It has important application prospects. Using thermoelectric cooling technology to cool co...

Claims

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Application Information

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IPC IPC(8): H01L35/32H01L35/08H01L35/34
CPCH10N10/817H10N10/01H10N10/17
Inventor 周敏苏浩健黄荣进李来风
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI