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Mononuclear III-V group quantum dot and preparation method thereof

A quantum dot and single-core technology, applied in the field of single-core III-V group quantum dots and their preparation, can solve the problems of poor size uniformity and small size of quantum dots, and achieve the effects of improving stability and improving size uniformity.

Pending Publication Date: 2022-05-31
合肥福纳科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of this application is to provide a single-core III-V quantum dot and its preparation method, which aims to improve the existing single-core III-V quantum dots with small size and poor size uniformity

Method used

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  • Mononuclear III-V group quantum dot and preparation method thereof
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  • Mononuclear III-V group quantum dot and preparation method thereof

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preparation example Construction

[0023] The present application provides a method for preparing single-core III-V quantum dots, which includes performing the following steps in sequence:

[0024] Mix group III source, first ligand and non-coordinating solvent for the first reaction to prepare cation source for epitaxy; mix group III-V group seed crystal with cation source for epitaxy for second reaction, add first anion source for The third reaction, the addition of organic acid for the fourth reaction and the addition of the second anion source for the fifth reaction. Wherein, both the first anion source and the second anion source are Group V sources.

[0025] It can be understood that the group III-V quantum dots may be InP quantum dots, InAs quantum dots, GaP quantum dots, GaAs quantum dots and so on. In this embodiment, the group III-V quantum dots are InP quantum dots or InAs quantum dots.

[0026] In this embodiment, the group III source is selected from an indium source, for example, the cation is I...

Embodiment 1

[0080] This embodiment provides a single-core InP quantum dot, which is prepared by the following steps:

[0081] (1) Add 3.6mmol of indium acetate and 10.8mmol of palmitic acid into a 100ml three-necked flask, keep it under an Ar gas atmosphere, heat it to 240°C with a heating mantle, keep it for 60min, and then cool it down to 170°C. The exhaust-intake system was changed to a vacuum system and kept for 30 minutes to obtain the indium source precursor. Rapidly inject 1.60 mmol of tri(trimethylsilyl)phosphine and 8 mmol of tri-n-octylphosphine, react for 5 minutes, then raise the temperature to 230° C. and keep for 15 minutes to finally obtain InP seed crystals.

[0082] (2) Add 18mmol of indium acetate, 14mmol of palmitic acid, 40mmol of oleic acid and 90ml of octadecene into a 250ml three-necked flask, keep it under an Ar gas atmosphere, heat it to 240°C with a heating mantle, and keep After 60 minutes, the temperature was lowered to 140°C, and the exhaust-intake system was...

Embodiment 2

[0085] The difference between Example 2 and Example 1 is that the tris(trimethylsilyl)phosphorus in step (1) is 2.0 mmol; the oleic acid in step (3) is 0.8 mmol.

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Abstract

The invention relates to the technical field of preparation of quantum dots, in particular to a mononuclear III-V group quantum dot and a preparation method thereof. The preparation method of the mononuclear III-V group quantum dot sequentially comprises the following steps: mixing a group III source, a first ligand and a non-coordinating solvent, and carrying out a first reaction to prepare a cation source for epitaxy; mixing the III-V group seed crystal with a cation source for epitaxy to carry out a second reaction, adding a first anion source to carry out a third reaction, adding organic acid to carry out a fourth reaction, and adding a second anion source to carry out a fifth reaction; wherein the first anion source and the second anion source are V-group sources. The prepared mononuclear III-V group quantum dots are large in size and good in size uniformity, and can meet the requirement of industrialization.

Description

technical field [0001] The present application relates to the technical field of preparation of quantum dots, in particular to a single-core III-V group quantum dot and a preparation method thereof. Background technique [0002] Due to their unique electronic and optical properties, III-V quantum dots are widely used in optical communication, detection, light-emitting diodes, and biological imaging. [0003] Relying on the Focusing theory, the nucleation and growth processes of III-V quantum dots are difficult to separate, resulting in a size bottleneck in the existing single-core III-V quantum dots; at the same time, with the increase in the size of single-core III-V quantum dots, The wide size distribution of single-core III-V quantum dots leads to poor size uniformity of quantum dots, which greatly hinders the industrialization process of single-core III-V quantum dots. Contents of the invention [0004] The purpose of this application is to provide a single-core III-V...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/70C09K11/74B82Y20/00B82Y40/00C01B25/08
CPCC09K11/70C09K11/7492B82Y20/00B82Y40/00C01B25/087C01P2002/84
Inventor 孙笑程陆玲丁云蒋畅
Owner 合肥福纳科技有限公司
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