The invention discloses a method of enhanced multi-arc ion film plating through the Hall source driving magnetron sputtering, which is used for preparing the rigid film materials including TiN, TiC, (Ti, Si)N, (Ti, Si)C, (Ti, Si)CN, Ti(CN), (Ti, Al)N. The method comprises the following steps: treating the surface of the workpiece in the device, heating it to 300-350 Deg.c, charging the working gas Ar and N2 in the air pressure 1-2x10-1Pa, wherein the voltage is provided by the direct current power and intermediate-frequency alternating-current power of the device, and the high inonization reacting gas ion is provided by the Hall source of the device, then the hard electron and the molecular gas collide and generate the glow discharge, and form the ion with chemical activity which reacts with the free radical in the workpiece surface and deposit the film, the depositing speed is 2.0-4.0 per hour; charging the protective atmosphere to the furnace and cooling, then can get the film in the workpiece surface.