Hall ion source actuated magnetron sputtering enhancing type multi-arc ion plating film method

A magnetron sputtering, multi-arc ion technology, applied in sputtering coating, ion implantation coating, vacuum evaporation coating and other directions, can solve the problem of thin film loose, quality reduction, magnetron sputtering deposition rate film-base bonding strength Low and other problems, to achieve the effect of significant strengthening effect and improving ionization rate

Inactive Publication Date: 2005-09-07
XI AN JIAOTONG UNIV
View PDF0 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, there are still some technical problems in various single-function PVD methods, such as the low deposition rate of magnetron sputtering and the low bonding strength of the film substrate; the droplets formed during the multi-arc ion plating deposition process make the film loose and reduce its quality.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Hall ion source actuated magnetron sputtering enhancing type multi-arc ion plating film method
  • Hall ion source actuated magnetron sputtering enhancing type multi-arc ion plating film method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0021] Embodiment: prepare TiN hard thin film

[0022] Put the workpiece 12 to be processed into the reaction chamber 1 of the furnace body, turn on the vacuum system 2 to evacuate the furnace body to 5×10 -4 During Pa, start to open the Ar in the gas supply system 3, keep the Ar flow rate as 100ml / min, bombard the workpiece 12 surface for 10 minutes by means of the high-energy ions in the plasma field generated by the bias power supply system 4-3, to reach the workpiece surface The effect of cleaning treatment; then turn on the heating system 6 to heat the workpiece to 300°C-350°C for 15 minutes, then at 1-2×10 -1 Under the pressure condition of Pa, pass the working gas Ar and N 2, keep the flow rate at 500ml / min, and provide discharge voltages of 25V and 200V for the multi-arc target 9 and the sputtering target 8 respectively by the multi-arc DC power supply 4-1 and the magnetron sputtering intermediate frequency AC power supply 4-2, and the discharge voltage is provided by...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method of enhanced multi-arc ion film plating through the Hall source driving magnetron sputtering, which is used for preparing the rigid film materials including TiN, TiC, (Ti, Si)N, (Ti, Si)C, (Ti, Si)CN, Ti(CN), (Ti, Al)N. The method comprises the following steps: treating the surface of the workpiece in the device, heating it to 300-350 Deg.c, charging the working gas Ar and N2 in the air pressure 1-2x10-1Pa, wherein the voltage is provided by the direct current power and intermediate-frequency alternating-current power of the device, and the high inonization reacting gas ion is provided by the Hall source of the device, then the hard electron and the molecular gas collide and generate the glow discharge, and form the ion with chemical activity which reacts with the free radical in the workpiece surface and deposit the film, the depositing speed is 2.0-4.0 per hour; charging the protective atmosphere to the furnace and cooling, then can get the film in the workpiece surface.

Description

technical field [0001] The invention relates to a method and equipment for depositing a hard thin film material with high hardness, strong binding force, oxidation resistance and corrosion resistance on the surface of a tool and mold, in particular to a Hall source excited magnetron sputtering enhanced type Multi-arc ion coating method. Background technique [0002] At present, there are three main methods for preparing hard thin film materials at home and abroad, namely chemical vapor deposition (CVD), plasma-assisted chemical vapor deposition (PCVD) and physical vapor deposition (PVD). [0003] The CVD method came out earlier and is suitable for the strengthening of cemented carbide parts. It still maintains certain advantages today, but its principle is mainly high-temperature heat-activated chemical vapor deposition reaction, which usually reaches about 1000 ° C, which exceeds that of ordinary steel. The tempering temperature of the tool and mold...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/35
Inventor 马胜利徐可为
Owner XI AN JIAOTONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products