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Gate etching method of GaN HEMT device, device preparation method, device and equipment

A device and gate technology, applied in the field of transistor devices, can solve the problems of large gate leakage, drift, and low threshold voltage, and achieve the effect of suppressing charge movement, reducing charge transfer, and solving drift.

Pending Publication Date: 2022-06-03
上海芯导电子科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The invention provides a gate etching method, device preparation method, device, and equipment of a GaN HEMT device, so as to solve the problems of large gate leakage, low threshold voltage and drift after long-term use

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  • Gate etching method of GaN HEMT device, device preparation method, device and equipment
  • Gate etching method of GaN HEMT device, device preparation method, device and equipment
  • Gate etching method of GaN HEMT device, device preparation method, device and equipment

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specific Embodiment approach

[0098] In an embodiment, the first etching uses a first etching gas. For example, the first etching gas may be an ICP etching gas. As a specific embodiment, the ICP etching gas is any one of Cl2, BCl, and N2. Of course, it should be appreciated that other types of etching gases may also be used for the first etching, and the present invention is not limited thereto.

[0099] In an embodiment, the second etching uses a second etching gas. As a preferred embodiment, the rate of etching the second P-type layer 106 by the second etching gas is lower than the rate of etching the second P-type layer 106 by the first etching gas, so that the first etching gas is used. The second etching gas is used as a means to reduce the second etching rate, thereby overcoming the above-mentioned practical difficulties.

Embodiment approach

[0100] As an embodiment, the second etching gas is a combination of a Cl-based etching gas and an O-based etching gas. Of course, it should be appreciated that other types of etching gases may also be used for the second etching, and the present invention is not limited thereto.

[0101] In one embodiment, the material of the dielectric layer is any one or a combination of SiO2, SiNX, and high-K dielectric materials.

[0102] In an embodiment, the material of the nucleation layer 102 is AlN, the material of the buffer layer 103 is GaN / AlGaN, the material of the channel layer 104 is GaN, and the material of the barrier layer 105 is ALxGa1 -xN; the material of the P-type layer is P-type GaN.

[0103] The invention belongs to the field of gallium nitride power semiconductor devices. By performing two different etching processes on the gate p-GaN, steps are formed on both sides of the p-GaN, the defects of the p-GaN sidewalls are reduced, and the surface defects of the AlGaN are ...

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Abstract

The invention provides a gate etching method of a GaN HEMT device. The gate etching method comprises the following steps: etching a P-type layer on a barrier layer; performing first etching on the first P-type layer by taking the first patterned barrier layer as a mask, and performing first chemical treatment on the exposed side surface of the remaining first P-type layer; forming a second patterned barrier layer on the surface of the remaining P-type layer; etching the second P-type layer for the second time by taking the second patterned barrier layer as a mask to form a step structure; performing second chemical treatment on the exposed side surface of the remaining second P-type layer and the exposed surface of the barrier layer; according to the technical scheme, charge movement from the barrier layer is effectively inhibited, the side wall defect of the P-type layer and the surface defect of the barrier layer generated in the etching process are eliminated, electric leakage and charge transfer to the grid electrode are effectively reduced, and therefore the stability and reliability of threshold voltage are improved, and the drifting phenomenon occurring after long-time use to a certain degree is solved.

Description

technical field [0001] The invention relates to the field of transistor devices, in particular to a gate etching method, device preparation method, device and equipment of a GaN HEMT device. Background technique [0002] Silicon-based gallium nitride high electron mobility transistors (GaN HEMTs) have the characteristics of high temperature resistance, high efficiency, high breakdown voltage, and low on-resistance, and are widely used in power switching systems. Devices with AlGaN / GaN epitaxial structures are normally-on devices, while traditional circuit topologies require the devices to be normally-off. Among the structures that have been commercialized at present, the epitaxial structure of p-GaN / AlGaN / GaN is mostly used to realize normally-off devices. [0003] However, the existing p-GaN structure normally-off devices have large gate leakage, low threshold voltage and drift after long-term use, which are not conducive to p-GaN / AlGaN / GaN The commercial use of the devic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/308H01L21/335H01L29/778
CPCH01L21/3086H01L29/66462H01L29/7786
Inventor 庞亚楠陈敏戴维欧新华袁琼符志岗邱星福刘宗金
Owner 上海芯导电子科技股份有限公司