GaN-based LED epitaxial structure capable of improving antistatic capability

Abstract

The invention discloses a GaN-based LED epitaxial structure capable of improving antistatic capability and a preparation method thereof, insertion layers are added between low-temperature pGaN layers and between pAlGaN layers, and the insertion layers are AlN layers; or, the insertion layer is an In < x > Al < 1-x > N layer, and 0 lt; xlt; 0.3 part; or the insertion layer is an AlN and In < x > Al < 1-x > N composite layer, 0 < lt >; xlt; and 0.3. According to the invention, the structure of the insertion layer is improved, and the heterojunction interface becomes smooth, so that the stress distribution of the P-AlGaN layer is uniform, the penetration dislocation is reduced, and the effect of improving the antistatic capability of the LED chip is further achieved.

Description

technical field [0001] The invention relates to the field of semiconductor lighting, in particular to a GaN-based LED epitaxial structure with improved antistatic capability. Background technique [0002] Light-emitting diodes have developed rapidly in recent years because of their advantages in energy saving, environmental protection, smart design, and long life. In particular, the success of III-V nitride semiconductor LED technology in the field of blue light has directly promoted the entry of LED lighting into thousands of households. The current mainstream GaN-based light-emitting diode chip structure is: a buffer layer grown sequentially from bottom to top on a patterned sapphire substrate, a non-doped GaN layer, a Si-doped n-type GaN layer, a stress release layer, a multi-quantum well layer, and a low-temperature pGaN layer, pAlGaN layer, p-type GaN layer doped with Mg. However, the lattice mismatch between low-temperature P and P-AlGaN heterojunction is relatively ...

AI Technical Summary

Problems solved by technology

However, the lattice mismatch between low-temperature P and P-AlGaN heterojunction is relatively large, which leads to high threading dislocation density and uneven stress distribution in the growth of P-AlGaN, which leads to the antistatic ability of LED chips. insufficient

Images