Method for cutting silicon rod through cross line, cutting equipment and cutting system

Abstract

The embodiment of the invention provides a method for cutting a silicon rod through a cross line, cutting equipment and a cutting system.The method comprises the steps that the silicon rod is cut once through two cutting lines perpendicular to each other in the length direction of the silicon rod, a first side face and a second side face are obtained through cutting, and the width of each side face is smaller than the diameter of the silicon rod; the silicon rod is cut through three cutting lines, and one cutting line is parallel to the first side face and intersects with the second side face; the other cutting line is parallel to the second side surface and intersects with the first side surface; another cutting line is parallel to the first side face or the second side face, and the distance between the cutting line and the center line of the silicon rod is smaller than the distance between the other two cutting lines and the center line of the silicon rod and is also smaller than the distance between the first side face and the center line of the silicon rod and the distance between the second side face and the center line of the silicon rod; and two small silicon rods with rectangular sections are obtained. According to the method for cutting the silicon rod through the cross line, the silicon rod with the small size can be directly obtained, and the silicon wafer is formed through slicing.

Description

technical field [0001] The present application relates to hard material cutting technology, and in particular, to a method, cutting equipment and cutting system for cutting silicon rods with cross-hairs. Background technique [0002] With the development of heterojunction cells, the demand for small silicon wafers is increasing, and the demand for thin wafers is also relatively large. The thickness of silicon wafers has increased from 180 microns to 150 microns. In the future, the market may even require silicon wafers with a thickness of 100 microns. The thinner the silicon wafer, the more difficult it is to cut, and the more difficult it is to guarantee the cutting quality. [0003] In the traditional scheme, the cylindrical monocrystalline silicon rod is usually cut into square rods, and then the square rod is cut into large silicon wafers, and then the large silicon wafers are diced and cut to form small silicon wafers using laser technology. The dicing process will cau...

AI Technical Summary

Problems solved by technology

The thickness of silicon wafers ranges from 180 microns to 150 microns, and the future market may even require 100 microns of silicon wafers. The thinner the silicon wafers, the more difficult it is to cut, and the less likely it is to guarantee the cutting quality.

[0003] In the traditional scheme, the cylindrical single crystal silicon rod is usually first cut into square rods, and then the square rods are cut into large silicon wafers, and then the large silicon wafers are diced and cut into small silicon wafers by laser technology. The scribing process will cause damage and defect states on the cross-section of the small silicon wafer, which will seriously affect the conversion efficiency of the final processed heterojunction cell

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