Inductive coupling plasma processing device and etching method thereof

Abstract

According to the etching method for the inductively coupled plasma processing device, the inductively coupled plasma processing device comprises a reaction cavity, the top of the reaction cavity comprises an insulating window and an inductance coil device located above the insulating window, the center of the insulating window comprises an air inlet nozzle, and the reaction cavity further comprises a base. A substrate to be processed is located on the base, the gas inlet nozzle is used for inputting processing gas into the reaction cavity, and the etching device is characterized in that the processing gas input into the reaction cavity through the gas inlet nozzle comprises etching gas and inert gas, the etching gas is used for reacting with a material on the substrate to be processed for etching, and the inert gas is used for reacting with the material on the substrate to be processed. The flow of the inert gas is greater than 2 / 3 of the flow of the etching gas.

Description

technical field [0001] The present invention relates to the field of semiconductors, in particular to a plasma treatment method applied to an inductively coupled plasma treatment device. Background technique [0002] Plasma processing apparatuses are widely used in the manufacturing processes of integrated circuits, such as deposition and etching. Among them, the Inductively Coupled Plasma (ICP) device is one of the mainstream technologies in the plasma processing device. The reactive gases are ionized to produce plasma. Plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals. When the appearance changes, the etching process is completed. [0003] figure 1 A schematic diagram of the structure of an inductively coupled plasma reaction device (ICP) is shown. The ICP etching equipment is a kind of ICP etching equipment that uses the energy of the radio frequency power supply to enter the interior of the reaction...

AI Technical Summary

Problems solved by technology

But the edge gas spout 203 that passes through the inner liner 220 that is made of aluminum will bring many technical problems, the gas flow channel in the liner 220 can be corroded by the corrosive process gas, the gas flow channel of complex shape and extremely fine inner diameter (minimum <1mm) makes it a technical challenge to apply corrosion-resistant coatings in these gas flow ducts

On the other hand, it is more difficult for the inner liner to control a stable temperature because the gas flow pipe passes through the inner liner 220. Therefore, although the supply of processing gas from the side wall of the reaction chamber can improve the uniformity of the plasma treatment, it also brings about complex structure and manufacturing. costly problem

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