Vapor-pressure-stabilized MO source device and vapor-pressure-stabilized MO source supply method

Abstract

The invention discloses an MO source device with stable vapor pressure and an MO source supply method with stable vapor pressure. The MO source device with stable vapor pressure comprises: a first MO source supply unit for supplementing MO source vapor to the second MO source supply unit with a solid MO source; the second MO source supply unit is used for supplying MO source steam into the epitaxial growth equipment by using an MO source solution; the carrier gas buffer unit is at least used for separating the solvent carried in the carrier gas output from the second MO source supply unit from the carrier gas; and the control unit is connected with the first MO source supply unit, the second MO source supply unit and the carrier gas buffer unit, and is at least used for adjusting the working states of the first MO source supply unit, the second MO source supply unit and the carrier gas buffer unit. The MO source device with stable vapor pressure provided by the invention can make up the consumption of a solid MO source in the MO source solution and maintain the stability of the vapor pressure in the MO source solution, thereby improving the stability of an epitaxial growth process.

Description

technical field [0001] The invention particularly relates to an MO source device with stable vapor pressure and a MO source supply method with stable vapor pressure, belonging to the technical field of semiconductor growth. Background technique [0002] Metal-organic compounds (MO sources) are important raw materials for epitaxial growth of optoelectronic materials in technologies such as metal-organic chemical vapor deposition (MOCVD), and the quality and stability of MO source materials are an important factor that cannot be ignored. When the solid MO source is used, the surface area of ​​the solid source decreases as the epitaxial growth progresses, and the channeling phenomenon intensifies, resulting in the instability of the saturated vapor pressure of the solid source. In addition, it is difficult for the carrier gas to carry the solid source into the conveying system and to be approached by the carrier gas flow. This leads to poor continuous stability of the solid-sta...

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Problems solved by technology

TW2034253A discloses that solid-state TMIn source solution is prepared by dissolving solid-state TMIn into a hydrocarbon solvent; literature Journal of Crystal Growth 124 (1992), Journal of Electronic Materials, 30 (2001) etc. report solid-state TMIn source solution and Cp 2 Mg source solution is applied to MOCVD epitaxial growth of III-V semiconductor materials. In view of the more stable extraction efficiency of solid precursor source solution, the domestic market began to use solid TMIn source solution and Cp 2 Mg source solution, with the increase in production capacity, the size of the reaction chamber of vapor deposition equipment is getting larger and larger, requiring a larger process flow setting. The solvent in the solid precursor solution is blown out of the source bottle into the deposition equipment pipeline, and even carried into the reaction The risk of the chamber, resulting in the pollution of the machine pipeline, the reaction chamber and the scrapping of the quality of the deposited film

[0004] Although the solid source solution has a more stable vapor pressure and extraction efficiency, the steady state of the solid source solution is an equilibrium between a solid source and a saturated source solution (as attached figure 1 As shown), as the carrier gas continues to carry the source vapor, the solid source is continuously consumed, and the vapor pressure decreases with long-term use, and the solution source becomes more unstable at the end of use

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