MPCVD single crystal diamond growth molybdenum support and single crystal diamond growth method
A single crystal diamond and growth method technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of diamond substrate movement, difficult cleaning of carbon layer, uneven heat dissipation, etc., to achieve easy cleaning, molybdenum support Simple structure, uniform heat dissipation effect
Active Publication Date: 2022-07-01
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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[0005] The embodiment of the present invention provides an MPCVD single crystal diamond growth molybdenum holder, which aims to solve the problem of diamond substrate movement and solve the problem of diamond substrate and the side wall of the slot The problem of uneven heat dissipation caused by surface-to-surface contact, the integrated carbon structure in the slot, the difficulty of cleaning the carbon layer, and the movement of the diamond substrate
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[0028] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.
[0029] Please also refer to figure 1 and figure 2 , Now the MPCVD single crystal diamond growth molybdenum tray provided by the present invention will be described. The MPCVD single crystal diamond growth molybdenum holder includes: a molybdenum holder base 2 and a separate molybdenum ring 1, the molybdenum ring 1 is stacked on the molybdenum holder base 2, and its outer surface does not protrude outside the molybdenum holder base 2. On the surface, the molybdenum ring 1 has a through hole external to the diamond substrate 3 .
[0030] The MPCVD single crys...
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The invention provides an MPCVD monocrystal diamond growth molybdenum support and a monocrystal diamond growth method, and belongs to the technical field of vapor deposition, the MPCVD monocrystal diamond growth molybdenum support comprises a molybdenum support base and a split molybdenum ring, the molybdenum ring is stacked on the molybdenum support base, the outer surface of the molybdenum ring does not protrude out of the outer surface of the molybdenum support base, and the molybdenum ring is provided with a through hole externally connected to a diamond substrate. The MPCVD monocrystal diamond growth molybdenum support provided by the invention can solve the problems of non-uniform heat dissipation, difficulty in cleaning a carbon deposition layer and movement of the diamond substrate caused by surface-to-surface contact between the diamond substrate and the side wall of the clamping groove. The molybdenum support is simple in structure, convenient to operate, uniform in heat dissipation, low in cost and convenient to clean in the growth process of the diamond, solves a series of problems existing in the growth of the single crystal diamond, and has great significance for researching the growth of the high-quality single crystal diamond.
Description
technical field [0001] The invention belongs to the technical field of vapor deposition, and in particular relates to an MPCVD single crystal diamond growing molybdenum tray and a single crystal diamond growing method. Background technique [0002] Due to a series of excellent properties such as high hardness, high mobility, high breakdown strength and high thermal conductivity, single crystal diamond has good development prospects in many aspects, and has attracted extensive attention from cutting-edge semiconductor fields and scientific researchers. With the increase of diamond application scenarios, such as: high-frequency and high-power electronic components, quantum devices based on diamond color centers, and radiation detection, the quality of single-crystal diamond has attracted much attention, and growing high-quality single-crystal diamond has become a related field. The main direction of the worker. [0003] Microwave plasma chemical vapor deposition (MPCVD) techn...
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IPC IPC(8): C30B25/00C30B29/04C23C16/458
CPCC30B25/00C30B29/04C23C16/4583
Inventor 马孟宇蔚翠郭建超刘庆斌王亚伟周闯杰何泽召冯志红
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP