Semiconductor structure based on ferroelectric Schottky tunnel junction and preparation method thereof
A semiconductor and ferroelectric technology, applied in the direction of semiconductor devices, electric solid devices, circuits, etc., can solve the two-way signal feedback behavior and system disorder, do not have high energy efficiency and high stability ultra-large-scale storage and computing integrated neuromorphic chips, related devices Structurally limited resistive bidirectional conduction working mode and other issues, to achieve the effect of large current switching ratio, stable switching state storage, and large on-state current
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Embodiment 1
[0091] Schottky tunneling junction based on HZO ferroelectric material was fabricated on Si substrate.
[0092] Step 1: Select Substrate and Grow Dielectric Spacer.
[0093] Select Si as the substrate 100 and SiO in turn 2 As the SOI substrate composed of the first isolation layer 200 and Si as the channel layer 300, such as figure 2 shown; a sacrificial layer with a thickness of 8 nm is grown by chemical vapor deposition process, and the resulting structure is as follows image 3 shown.
[0094] Step 2: Ion implantation.
[0095] Photolithography of the sacrificial layer, and then use of ion implantation process, using P - As the ion source, set the ion implantation energy to 20KeV, start the implantation from the surface of the sacrificial layer, and the carrier concentration in the doped region is 1×10 18 cm -3 , the resulting structure is Figure 4 shown.
[0096] Step 3: forming the first electrode layer 400 and the second electrode layer 500 .
[0097] Using ph...
Embodiment 2
[0103] Schottky tunneling junction based on HAO ferroelectric material was fabricated on Ge substrate.
[0104] Step 1: Select Substrate and Grow Dielectric Spacer.
[0105] Select Ge as the substrate 100 and SiO in turn 2 As the GOI substrate composed of the first isolation layer 200 and Si as the channel layer 300, such as figure 2 shown; a sacrificial layer with a thickness of 8 nm is grown by chemical vapor deposition process, and the resulting structure is as follows image 3 shown.
[0106] Step 2: Ion implantation.
[0107] Photolithography of the sacrificial layer, and then use of ion implantation process, using P - As the ion source, set the ion implantation energy to 15KeV, start the implantation from the surface of the sacrificial layer, and the carrier concentration of the doped region is 1×10 18 cm -3 , the resulting structure is Figure 4 shown.
[0108] Step 3: forming the first electrode layer 400 and the second electrode layer 500 .
[0109] Using ph...
Embodiment 3
[0115] Schottky tunneling junction based on HfSiO ferroelectric material was fabricated on Si substrate.
[0116] Step 1: Select Substrate and Grow Dielectric Spacer.
[0117] Select Si as the substrate 100 and SiO in turn 2 As the SOI substrate composed of the first isolation layer 200 and Si as the channel layer 300, such as figure 2 shown; a sacrificial layer with a thickness of 8 nm is grown by chemical vapor deposition process, and the resulting structure is as follows image 3 shown.
[0118] Step 2: Ion implantation.
[0119] Photolithography of the sacrificial layer, and then use of ion implantation process, using P - As the ion source, set the ion implantation energy to 20KeV, start the implantation from the surface of the sacrificial layer, and the carrier concentration in the doped region is 1×10 18 cm -3 , the resulting structure is Figure 4 shown.
[0120] Step 3: forming the first electrode layer 400 and the second electrode layer 500 .
[0121] Using ...
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