Epitaxial wafer preparation method for improving doping efficiency and epitaxial growth equipment

Abstract

The invention provides an epitaxial wafer preparation method for improving doping efficiency and epitaxial growth equipment, and belongs to the technical field of epitaxial preparation. Cp2Mg enters the reaction cavity through the magnesium source pipeline, and the side wall of the magnesium source pipeline is communicated with an auxiliary pushing pipeline. In the process that solid Cp2Mg enters the reaction cavity through the magnesium source pipeline, growth pushing gas is introduced into the magnesium source pipeline through the auxiliary pushing pipeline, and the growth pushing gas is inert gas. The doping amount of Cp2Mg is not increased, meanwhile, the unit flow velocity of Cp2Mg is increased, flowing and reaction of Cp2Mg in the reaction cavity are promoted, uniform distribution of Cp2Mg is guaranteed, and rapid growth of the p-type GaN layer is promoted. The distribution of Cp2Mg is more uniform, so that the doping efficiency and the distribution uniformity of the Mg element in the p-type GaN layer can be improved, and the radiation recombination efficiency of electrons and holes in the finally obtained epitaxial wafer can be improved.

Description

technical field [0001] The present disclosure relates to the technical field of epitaxial preparation, and in particular, to an epitaxial wafer preparation method and an epitaxial growth device for improving doping efficiency. Background technique [0002] Light-emitting diodes are widely used light-emitting devices, often used for signal lights, interior and exterior lights of automobiles, urban lighting and landscape lighting, etc. Light-emitting diode epitaxial wafers are the basic structure for preparing light-emitting diodes. The light-emitting diode epitaxial wafer usually includes a substrate and an n-type GaN layer, a light-emitting layer and a p-type GaN layer stacked in sequence on the substrate. The electrons generated by the n-type GaN layer and the holes generated by the p-type GaN layer enter the light-emitting layer under the action of current. recombination occurs in the layers and emits light. [0003] The p-type GaN layer needs to be doped with Mg to ensur...

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Problems solved by technology

Due to Cp 2 Mg is solid, Cp 2 The efficiency of Mg being brought to the reaction chamber by the carrier gas is lower than that of the liquid metal source, while Cp 2 The activation efficiency of Mg itself is also relatively low. The superposition effect of the two results in less Mg elements finally entering the p-type GaN layer, resulting in a small number of effective holes and uneven distribution in the p-type GaN layer, which in turn affects electrons and holes. The radiative recombination efficiency of

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