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Electrode conductive column binding type wafer manufacturing method

A manufacturing method and technology of conductive pillars, which are applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as lower yield, affect production quality, wafer breakage, etc., to reduce thermal resistance and wafer breakage. chance, the effect of improving wafer strength

Pending Publication Date: 2022-08-02
南通格普微电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, with the development of the chip industry, the thickness of the chip is getting thinner and thinner. According to the current thinning process, the wafer is easily broken during the thinning process due to the current thinning process, which greatly affects the production quality. lead to lower yield

Method used

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  • Electrode conductive column binding type wafer manufacturing method
  • Electrode conductive column binding type wafer manufacturing method

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Embodiment Construction

[0012] The following describes in detail the embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary, only used to explain the present invention, and should not be construed as a limitation of the present invention. On the contrary, embodiments of the present invention include all changes, modifications and equivalents falling within the spirit and scope of the appended claims.

[0013] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", " Rear, Left, Right, Vertical, Horizontal, Top, Bottom, Inner, Outer, Axial, Radial, Circumferential, etc. The indicated orientation or po...

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PUM

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Abstract

The invention provides a manufacturing method of an electrode conductive column binding type wafer. The manufacturing method comprises the following steps: S1, manufacturing conductive copper foil into patterned copper foil; s2, wafer binding is carried out; s3, filling an insulating protective layer; s4, pasting the front side of the protective film; s5, thinning the wafer; s6, tearing the film; s7, metallizing the back surface; and S8, scribing and packaging. Ultrathin wafer processing is realized through a chip front surface design process and a back surface thinning process, so that the power density of the chip can be improved, the thermal resistance is reduced, and the packaging volume is reduced. And through thickening the metal layer and protecting the insulating layer, the wafer strength is improved, and the wafer fracture probability is reduced. Therefore, the product is suitable for various power device chip diodes, triodes, MOSFETs, IGBTs, TVS, SCR, GTO, SiC Diodes, SiC MOSFETs, GaN MOSFETs and the like.

Description

technical field [0001] The invention relates to the field of electronic component manufacturing, in particular to a method for manufacturing an electrode conductive column-bound wafer. Background technique [0002] Integrated circuit chips are constantly developing in the direction of high density and thinness. In order to meet the requirements, wafers need to be thinned and cut. Wafer thinning technology is the key technology of stacked chip packaging, and the thinning process, as an important process in chip production, has a great impact on the production quality of chips. In the current wafer thinning process, the wafer is generally thinned to a predetermined thickness range, and then the wafer is cut into individual chips. However, with the development of the chip industry, the thickness of the chip is getting thinner and thinner. If the direct thinning process is carried out according to the current thinning process, the wafer is easily broken during the thinning proc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/60H01L21/67
CPCH01L24/11H01L21/67132H01L2224/11019H01L2224/111
Inventor 任留涛
Owner 南通格普微电子有限公司