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Quantum dot, preparation method of quantum dot, quantum dot light-emitting diode and preparation method of quantum dot light-emitting diode

A quantum dot luminescence and quantum dot technology, which is applied in luminescent materials, chemical instruments and methods, nano optics, etc., can solve the problems of quantum dot device performance degradation, limited carrier transport, device performance degradation, etc.

Pending Publication Date: 2022-08-05
合肥福纳科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Existing QLEDs (quantum dot light emitting diodes) are usually stacked with thin-film structures such as electrodes, electron injection layers, quantum dot light-emitting layers, hole injection layers, and hole transport layers. The internal quantum efficiency of QLED is 100%, but the external quantum efficiency (EQE) and device lifetime of QLED are still the main factors restricting the application of QLED.
One of the important factors is that the insulation of these alkyl ligands on the quantum dots limits the transport of carriers between the quantum dots, resulting in a decrease in the performance of the final quantum dot device
Although existing solutions can improve the carrier transport of quantum dot devices by optimizing the concentration of alkyl ligands or the length of alkyl chains, it will also reduce the stability of quantum dots, which will lead to a decline in device performance, that is, Existing solutions cannot simultaneously improve the stability of quantum dots and the carrier transport characteristics between quantum dots

Method used

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  • Quantum dot, preparation method of quantum dot, quantum dot light-emitting diode and preparation method of quantum dot light-emitting diode
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  • Quantum dot, preparation method of quantum dot, quantum dot light-emitting diode and preparation method of quantum dot light-emitting diode

Examples

Experimental program
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Embodiment 1

[0044] Preparation of quantum dots

[0045] (1) Prepare an n-octane solution of phenylacrylic acid, dissolve 3 g of phenylacrylic acid in 6 ml of n-octane solvent, heat to 40° C. and stir and mix to obtain a clear solution.

[0046] (2) get configured 2ml of phenylacrylic acid solution and join in the first quantum dot non-polar solution that the amount of 3ml material is 0.01mmol / ml, wherein, the first quantum dot is CdSe / ZnS (core structure is CdSe, shell The structure is ZnS) and the second ligand is oleic acid. The ratio of the amount of phenylacrylic acid to the first quantum dots was 100:1, and the mixture was heated to 110° C. and stirred for 24 h to obtain a quantum dot solution using phenylacrylic acid as a ligand. Then add a polar solvent such as ethanol to precipitate, centrifuge, pour off the mixed solution, and add 3 ml of n-octane to the precipitate to re-dissolve the quantum dots.

Embodiment 2

[0048] Quantum dots were prepared with reference to the method of Example 1. The difference from Example 1 was that the ratio of the amount of phenylacrylic acid to the amount of the first quantum dot was 90:1, and other conditions were the same.

Embodiment 3

[0050] Quantum dots were prepared with reference to the method of Example 1. The difference from Example 1 was that the ratio of the amount of phenylacrylic acid to the amount of the first quantum dot was 110:1, and other conditions were the same.

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Abstract

The invention discloses a quantum dot, a preparation method thereof, a quantum dot light-emitting diode and a preparation method thereof, the quantum dot comprises a core-shell structure and a first ligand connected with the core-shell structure, and the first ligand is cinnamic acid. Therefore, the phenylacrylic acid ligand with high carrier mobility and high electrochemical stability is adopted to replace a ligand on the surface of a traditional quantum dot, phenylacrylic acid has excellent carrier mobility and high chemical polarity, and after phenylacrylic acid and metal ions on the surface of the core-shell structure form coordination, the injection rate of carriers of a QLED device can be greatly increased, and the quantum dot quantum dot is prepared. And the performance of the QLED device is improved.

Description

technical field [0001] The invention belongs to the technical field of quantum dot devices, and in particular relates to quantum dots, a preparation method thereof, a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Due to the advantages of easy synthesis, low cost, high quantum yield, continuously adjustable wavelength, and high color purity, quantum dot materials have set off a research upsurge in the field of optoelectronics and become a hot "star material". Existing quantum dot materials usually have a core-shell structure. In the preparation process of quantum dots, in order to ensure the stability of quantum dots, an inorganic shell layer is usually grown on the outer layer of the core and an alkyl chain ligand is added. [0003] Existing QLEDs (quantum dot light-emitting diodes) are usually composed of electrodes, electron injection layers, quantum dot light-emitting layers, hole injection layers, and hole transport lay...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/62C09K11/66C09K11/70C09K11/88H01L51/50H01L51/54B82Y30/00B82Y20/00
CPCC09K11/883C09K11/621C09K11/665C09K11/664C09K11/02C09K11/025C09K11/70B82Y20/00B82Y30/00H10K50/115
Inventor 汪鹏生龚克宋斌孙笑
Owner 合肥福纳科技有限公司