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Ferroelectric memory device and method of manufacturing the same

A technology of ferroelectric and storage elements, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., and can solve problems such as difficulties in high integration

Inactive Publication Date: 2004-05-12
SEIKO EPSON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in such etching, the side wall becomes a sloped capacitor part, so high integration becomes difficult

Method used

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  • Ferroelectric memory device and method of manufacturing the same
  • Ferroelectric memory device and method of manufacturing the same
  • Ferroelectric memory device and method of manufacturing the same

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment

[0139] Figure 1A ~ Figure 3B is a diagram showing a method of manufacturing a ferroelectric memory element to which the first embodiment of the present invention is applied. A ferroelectric memory element is a nonvolatile semiconductor memory device. The smallest unit for storing information is a memory cell, for example, a transistor and a capacitor are partially combined to form a memory cell. A plurality of such memory cells can be arranged in parallel to form a memory array. At this time, multiple storage units can be regularly arranged in multiple rows and multiple columns.

[0140] (transistor formation process)

[0141] Such as Figure 1A As shown, a transistor 12 for controlling a ferroelectric memory element is formed on a substrate 10 made of a semiconductor wafer. If necessary, a structure in which a functional device such as a transistor is provided on the substrate 10 corresponds to a base material. The transistor 12 may employ a known structure, or may be ...

no. 2 Embodiment

[0182] Figure 6A ~ Figure 7C It is a diagram showing a method of manufacturing a ferroelectric memory element according to a second embodiment of the present invention. In this example, in the Figure 6A The capacitor portion is formed on the substrate 110 . The substrate 110 corresponds to the content of the substrate 10 described in the first embodiment.

[0183] (1st electrode formation process)

[0184] Such as Figure 6A As shown, a first electrode (lower electrode) 132 is formed on a substrate 110 . The formation method thereof is, for example, forming an electrode material for forming the first electrode 132 on the substrate 110 and patterning the formed electrode material.

[0185] The electrode material is not particularly limited as long as it functions as a part of the ferroelectric capacitor. For example, as constituting the ferroelectric film 134 (see Figure 7C ) when lead zirconate titanate (PZT) is used as the electrode material constituting the first e...

no. 3 Embodiment

[0205] Figure 8A ~ Figure 9C It is a diagram showing a method of manufacturing a ferroelectric memory element according to a third embodiment of the present invention. In this example, in Figure 8A A capacitor portion is formed on a substrate 110 as shown. As for the substrate 110, it corresponds to the content of the substrate 10 described in the first embodiment.

[0206] (1st electrode formation process)

[0207] Such as Figure 8A As shown, a first electrode (lower electrode) 132 is formed on a substrate 110 . In detail, it has been described in the second embodiment.

[0208] (Film formation process of ferroelectric material)

[0209] Such as Figure 8A As shown, a ferroelectric material 233 is formed into a film. Specifically, the ferroelectric material 233 is formed on the surface of the substrate 110 on which the first electrode 132 is formed so as to cover the first electrode 132 .

[0210] As the composition of the ferroelectric material 233, perovskite ox...

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Abstract

A method including a step of forming a first region (24) on which the material of a member of a ferroelectric capacitor section is easily deposited and a second region (26) on which the material for forming the ferroelectric capacitor section is less easily deposited than the first region (24), in the surface of a substrate (10) on which a transistor is formed, and a step of supplying materials to the substrate (10), and forming a first electrode (32), a ferroelectric film (34), and a second electrode (36) in the first region (24).

Description

technical field [0001] The present invention relates to a ferroelectric storage element and its manufacturing method. Background technique [0002] Ferroelectric memory (FeRAM) is a memory that uses a ferroelectric film in the capacitor portion and retains data by its spontaneous magnetization. Hitherto, the capacitor portion has been formed by dry etching using a reactive gas using a patterned resist as a mask. [0003] However, in the prior art, the materials constituting the capacitor part, especially platinum (Pt) and iridium (Ir), which are suitable as electrode materials, have low reactivity to the gas used in etching, so generally by increasing the Physical etching (sputter etching) for etching. At this time, the secondary products generated along with the etching cannot be removed in the gas phase, and adhere to the side walls of the resist pattern again. It is very difficult to remove this reattachment, which remains as a structure. As one of methods for avoidin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/033H01L21/316H10B12/00H10B20/00H10B69/00H10B99/00
CPCH01L27/11507H01L28/60H01L21/31691H01L21/0337H01L27/11502H01L28/55H01L21/02271H01L21/02282H01L21/02197H01L21/02205H10B53/30H10B53/00H01L27/105
Inventor 下田达也西川尚男
Owner SEIKO EPSON CORP
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