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Manufacturing method of base plate material for electron device

A technology for electronic devices and manufacturing methods, which is applied to electric solid devices, electrical components, semiconductor devices, etc., can solve the problems affecting the performance consistency of thermal expansion coefficient, uneven material composition, high cost, etc., to ensure air tightness and thermal conductivity. Electrical conductivity, simple process, and the effect of improving production efficiency

Inactive Publication Date: 2005-01-12
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] (1) Ultrafine raw material powder and activated elements are required to achieve high density (above 97%), which results in high cost and reduced performance;
[0004] (2) It is easy to cause uneven composition of materials, which affects the consistency of thermal expansion coefficient performance

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Example 1: Preparation of W-15Cu substrate material

[0019] Put the industrial tungsten powder with a Fischer grain size of 4.1 μm in a molybdenum wire furnace and treat it at 1200°C for 1 hour under a wet hydrogen atmosphere; the treated tungsten powder is directly pressed into a green body of 75×50×4mm under a pressure of 915MPa. Its density is 72.46% T.D. without adding any plasticizer and lubricant.

[0020] Then pre-fire the green body at 1200°C for 1 hour in dry hydrogen to remove oil, water vapor, and reduce residual oxides; then place a copper block of corresponding weight under the green body, raise the temperature to 1350°C, and use hydrogen as the protective atmosphere. Keep warm for 1 hour, and then get W-15Cu heat dissipation substrate material after cooling.

[0021] After testing, the material contains 85% tungsten and 15% copper. Its performance indicators are listed in Table 1.

[0022] It can be seen that the tungsten copper or molybdenum copper ma...

Embodiment 2

[0023] Embodiment 2: Preparation of Mo-15Cu substrate material

[0024] The industrial molybdenum powder with a Fischer particle size of 2.0 μm was treated in a wet hydrogen atmosphere at 900°C for 40 minutes; the treated molybdenum powder was directly pressed into a Φ50×4mm green body with a pressure of 700MPa without adding any plasticizer and Lubricant, available with a green density of 83.27% T.D.

[0025] Pre-burn the green body at 1000°C in dry hydrogen to remove oil, water vapor, and reduce residual oxides; then place a copper block of corresponding weight under the green body, raise the temperature to 1350°C, and the protective atmosphere is a mixture of nitrogen and hydrogen Gas, wherein 25vol.% of nitrogen, 75vol.% of hydrogen, heat preservation for 1 hour, after cooling, the Mo-15Cu heat dissipation substrate material can be obtained.

[0026] Material

[0027] After testing, the material contains 85% molybdenum and 15% copper. Its performance indicator...

Embodiment 3

[0028] Example 3: Preparation of W-10Cu

[0029] The industrial tungsten powder with a Fischer particle size of 4.1 μm was treated in a molybdenum wire furnace at 1300°C for 2 hours under a wet hydrogen atmosphere; after the treatment, the tungsten powder was directly pressed into a green body of 23×10×3mm under a pressure of 1800MPa; The green density is 80.69% T.D., without adding any plasticizer and lubricant;

[0030] Preheat the green body at 1200°C in dry hydrogen to remove oil, water vapor, and reduce residual oxides; then place a copper block of corresponding weight under the green body, raise the temperature to 1350°C, and keep the temperature for 1 hour in a vacuum protective atmosphere , After cooling, the W-10Cu heat dissipation substrate material can be obtained.

[0031] After testing, the material contains 90% tungsten and 10% copper. Its performance indicators are also listed in Table 1.

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PUM

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Abstract

A process for preparing the substrate board of electronic devices includes preparing the porous skeleton from W or Mo, and filling the pores with molten copper by capillary action. Its advantages are high compactness and thermal and electric conductivities, a desired strength and hardness, and low cost.

Description

technical field [0001] The invention relates to the powder metallurgy method for preparing packaging materials for electronic devices, in particular, a heat dissipation substrate material with high density and thermal expansion coefficient matching with other materials in electronic devices. Background technique [0002] The previous methods are complicated in process and difficult in technology, and all use the principle of liquid phase sintering, and there are two problems: [0003] (1) Ultrafine raw material powder and activated elements are required to achieve high density (above 97%), which results in high cost and reduced performance; [0004] (2) It is easy to cause uneven composition of materials, which affects the consistency of thermal expansion coefficient performance. Contents of the invention [0005] The object of the present invention is to overcome the density problem that is difficult to solve by traditional technology; to realize the precise control of t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B22F3/16H01L23/36H05K7/20
CPCH01L2924/0002
Inventor 王志法姜国圣刘正春
Owner CENT SOUTH UNIV