Construtional body with through hole and its mfg. method and liquid discharge head

Abstract

A structure having a base plate, such as silicon, provided with a through hole makes it possible to curtail the process numbers at the time of manufacture, while enhancing the reliability thereof. When the through hole is provided by anisotropic etching from the backside of the base plate, a silicon nitride film, which becomes membrane on the surface side of the base plate is formed so as not to allow etching solution from leaking to the surface side of the base plate. It is preferable to form the silicon nitride film using plasma CVD method to make the inner stress of the silicon nitride film a compression stress of 3x108 Pa or less.

Description

technical field [0001] The present invention relates to a structure comprising a silicon (Si) semiconductor substrate and the like and having a through hole and a method for manufacturing the same, in particular to a structure suitable for use in a thermal recording head or an inkjet recording head used in a printer or the like, and a structure thereof. A manufacturing method, a liquid discharge head and an apparatus using such a structure. Background technique [0002] Structures having through holes are used in various fields. For example, a structure having a through-hole made of a silicon semiconductor substrate or the like is used in an inkjet recording head that performs recording by discharging ink used in an inkjet printer or the like. Next, a structure having through-holes will be described taking the case of an ink jet recording head that discharges ink by thermal energy as an example. [0003] In the inkjet recording head utilizing thermal energy, thermal energy...

AI Technical Summary

Problems solved by technology

That is, in the case of a compressive stress film, it can be seen that the problems of cracks and peeling cannot be avoided

[0023] In the case of the manufacturing method of the above-mentioned conventional inkjet recording head, even if the process of forming a through hole on a silicon substrate to provide a supply port and the process of forming a heating resistor, a drive circuit, and a peripheral circuit on a silicon substrate are performed simultaneously, it takes 5 One photomask is only related to the process of setting the supply port. When processing other parts not shown in the figure, 17-18 photomasks are used as a whole, and the process is complicated

In particular, there is a problem that a silicon nitride film having tensile stress (in the above example, a silicon nitride film formed by a reduced-pressure CVD method) is formed as a surface layer requires many steps.

[0024] On the other hand, when a silicon nitride film formed by plasma CVD is used as the surface layer without forming a silicon nitride film having tensile stress, problems of cracking and peeling are conceivable.

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