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Nondestructive inspecting method

A technology of non-destructive testing and testing devices, which is applied in some areas of loss

Inactive Publication Date: 2005-03-23
NEC ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

On the other hand, when a laser beam 22 such as a laser beam 22 is irradiated on a defect 18 that accelerates recombination, if an electron and hole pair is generated, the recombination causes the electron and hole pair to disappear, and no OBIC current flows.
However, the pattern defect observation method has disadvantages based on its principle

Method used

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Embodiment Construction

[0057] Embodiments of the present invention are described in detail below.

[0058] First, the basic structure of the nondestructive testing method according to the present invention will be explained. 1 and 2 are typical schematic diagrams showing the basic structure of the nondestructive testing method of the present invention, and respectively show the case of constituting the current path in which only wires such as copper wires constitute the path through which the OBIC current flows, and the configuration including CR delay. The condition of the current path of the circuit. also, Figure 1(a) and 2(a) Involving leakage defects including short-circuit defects (hereinafter referred to as leakage defects), Figure 1(b) and 2(b) It relates to resistance-increased defects including disconnection defects (hereinafter simply referred to as resistance-increased defects).

[0059] first explain all Figure 1(a) , 1(b) , a common structure in 2(a) and (2b). The common unit...

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Abstract

A non-destructive inspection method includes: a first step of generating a laser light ranging in wavelength from 300 nm to 1,200 nm, and generating a laser beam converging into a predetermined beam diameter; a second step of predetermined electrical connection means configuring a predetermined current path for passing an OBIC current generated by an OBIC phenomenon when the laser beam is radiated onto the p-n junction and the vicinity of the p-n junction formed in the semiconductor chip to be inspected at least in the substrate including a wafer state and an installation state during the production process; a third step of scanning a predetermined area of a semiconductor chip while radiating the laser beam; a fourth step of magnetic flux detection means detecting magnetic flux induced by the OBIC current generated by the laser beam at each radiation point scanned in the third step; and a fifth step of determining whether or not there is a resistance increase defect including a disconnection defect or a leak defect including a short circuit defect in the current path including the radiation point of said semiconductor chip based on said magnetic flux detected in the fourth step.

Description

technical field [0001] The present invention relates to a method for non-destructive testing of semiconductor chips in wafer state, assembly state, etc. The method of the part of the loss of the resistance or the disconnection. Background technique [0002] Typically, such nondestructive inspection techniques have been used to detect defective portions of p-n junctions in a nondestructive manner as part of failure and defect analysis in semiconductor chips. [0003] Figure 15 The principles of conventional nondestructive testing methods are illustrated. When the laser beam 2 is irradiated on the p-n junction 1, a pair of electrons 3 and holes 4 are generated. Each of them flows in opposite directions through the electric field of the dummy layer of the p-n junction 1 and the electric field of the external power source 5 . Therefore, this flowing current is called current due to the OBIC (Optical Beam Induced Current) phenomenon. This OBIC current 6 is detected as a curr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66G01R31/311
CPCG01R31/311H01L22/00
Inventor 二川清
Owner NEC ELECTRONICS CORP